Kinetics of hydrogen desorption from Si(100) and Si(111) surfaces following chemisorption of disilane and trisilane

J. W. Sharp; Gyula Eres

doi:10.1016/0039-6028(94)00515-X

Kinetics of hydrogen desorption from Si(100) and Si(111) surfaces following chemisorption of disilane and trisilane

J. W. Sharp, Gyula Eres

Quantum Heterostructures

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Abstract

The kinetics of hydrogen desorption from Si(100) and Si(111) surfaces during epitaxial silicon thin film growth from disilane and trisilane was investigated using differential surface reflectance. For both source molecules, first-order hydrogen desorption was observed from Si(100), and an intermediate reaction order was found on Si(111).

Original language	English
Pages (from-to)	169-173
Number of pages	5
Journal	Surface Science
Volume	320
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(94)00515-X
State	Published - 1994

Funding

Acknowledgements are directed to T.E. Haynes (RBS) and G.E. Jellison (ellipsometry) for measurements and analysis. This research was supported in part by an appointment to the Oak Ridge National Laboratory Postdoctoral Research Program administered by the Oak Ridge Institute for Science and Education.

Funders	Funder number
Oak Ridge Institute for Science and Education

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10.1016/0039-6028(94)00515-X

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title = "Kinetics of hydrogen desorption from Si(100) and Si(111) surfaces following chemisorption of disilane and trisilane",

abstract = "The kinetics of hydrogen desorption from Si(100) and Si(111) surfaces during epitaxial silicon thin film growth from disilane and trisilane was investigated using differential surface reflectance. For both source molecules, first-order hydrogen desorption was observed from Si(100), and an intermediate reaction order was found on Si(111).",

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AU - Sharp, J. W.

AU - Eres, Gyula

PY - 1994

Y1 - 1994

N2 - The kinetics of hydrogen desorption from Si(100) and Si(111) surfaces during epitaxial silicon thin film growth from disilane and trisilane was investigated using differential surface reflectance. For both source molecules, first-order hydrogen desorption was observed from Si(100), and an intermediate reaction order was found on Si(111).

AB - The kinetics of hydrogen desorption from Si(100) and Si(111) surfaces during epitaxial silicon thin film growth from disilane and trisilane was investigated using differential surface reflectance. For both source molecules, first-order hydrogen desorption was observed from Si(100), and an intermediate reaction order was found on Si(111).

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U2 - 10.1016/0039-6028(94)00515-X

DO - 10.1016/0039-6028(94)00515-X

M3 - Article

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VL - 320

SP - 169

EP - 173

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Kinetics of hydrogen desorption from Si(100) and Si(111) surfaces following chemisorption of disilane and trisilane

Abstract

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UN SDGs

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