Kinetics of facile bilayer Island formation at low temperature: Ag/NiAl(110)

Yong Han; Baris Unal; Feili Qin; Dapeng Jing; C. J. Jenks; Da Jiang Liu; P. A. Thiel; J. W. Evans

doi:10.1103/PhysRevLett.100.116105

Kinetics of facile bilayer Island formation at low temperature: Ag/NiAl(110)

Yong Han
, Baris Unal
, Feili Qin
, Dapeng Jing
, C. J. Jenks
, Da Jiang Liu
, P. A. Thiel
, J. W. Evans

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Facile nucleation and growth of bilayer Ag(110) islands on NiAl(110) is observed by STM for Ag deposition at temperatures as low as 127 K. Density functional theory analysis for supported Ag films determines adatom adsorption energies (which favor bilayer islands), interaction energies, and diffusion barriers. Analysis of an atomistic lattice-gas model incorporating these energies elucidates the role of strongly anisotropic interactions in enabling the upward mass transport needed for bilayer island formation.

Original language	English
Article number	116105
Journal	Physical Review Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.100.116105
State	Published - Mar 21 2008
Externally published	Yes

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@article{5c50ecf5055c4b50bf5c5f14b58a859f,

title = "Kinetics of facile bilayer Island formation at low temperature: Ag/NiAl(110)",

abstract = "Facile nucleation and growth of bilayer Ag(110) islands on NiAl(110) is observed by STM for Ag deposition at temperatures as low as 127 K. Density functional theory analysis for supported Ag films determines adatom adsorption energies (which favor bilayer islands), interaction energies, and diffusion barriers. Analysis of an atomistic lattice-gas model incorporating these energies elucidates the role of strongly anisotropic interactions in enabling the upward mass transport needed for bilayer island formation.",

author = "Yong Han and Baris Unal and Feili Qin and Dapeng Jing and Jenks, \{C. J.\} and Liu, \{Da Jiang\} and Thiel, \{P. A.\} and Evans, \{J. W.\}",

year = "2008",

month = mar,

day = "21",

doi = "10.1103/PhysRevLett.100.116105",

language = "English",

volume = "100",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "11",

}

TY - JOUR

T1 - Kinetics of facile bilayer Island formation at low temperature

T2 - Ag/NiAl(110)

AU - Han, Yong

AU - Unal, Baris

AU - Qin, Feili

AU - Jing, Dapeng

AU - Jenks, C. J.

AU - Liu, Da Jiang

AU - Thiel, P. A.

AU - Evans, J. W.

PY - 2008/3/21

Y1 - 2008/3/21

N2 - Facile nucleation and growth of bilayer Ag(110) islands on NiAl(110) is observed by STM for Ag deposition at temperatures as low as 127 K. Density functional theory analysis for supported Ag films determines adatom adsorption energies (which favor bilayer islands), interaction energies, and diffusion barriers. Analysis of an atomistic lattice-gas model incorporating these energies elucidates the role of strongly anisotropic interactions in enabling the upward mass transport needed for bilayer island formation.

AB - Facile nucleation and growth of bilayer Ag(110) islands on NiAl(110) is observed by STM for Ag deposition at temperatures as low as 127 K. Density functional theory analysis for supported Ag films determines adatom adsorption energies (which favor bilayer islands), interaction energies, and diffusion barriers. Analysis of an atomistic lattice-gas model incorporating these energies elucidates the role of strongly anisotropic interactions in enabling the upward mass transport needed for bilayer island formation.

UR - https://www.scopus.com/pages/publications/41449095214

U2 - 10.1103/PhysRevLett.100.116105

DO - 10.1103/PhysRevLett.100.116105

M3 - Article

AN - SCOPUS:41449095214

SN - 0031-9007

VL - 100

JO - Physical Review Letters

JF - Physical Review Letters

IS - 11

M1 - 116105

ER -

Kinetics of facile bilayer Island formation at low temperature: Ag/NiAl(110)

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