Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability

Yunwei Ma; Ming Xiao; Yuhao Zhang; Zhonghao Du; Xiaodong Yan; Han Wang; Kai Cheng; Michael Clavel; Mantu K. Hudait; Lei Tao; Feng Lin; Ivan Kravchenko

doi:10.23919/ISPSD50666.2021.9452203

Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability

Yunwei Ma, Ming Xiao, Yuhao Zhang, Zhonghao Du, Xiaodong Yan, Han Wang, Kai Cheng, Michael Clavel, Mantu K. Hudait, Lei Tao, Feng Lin, Ivan Kravchenko

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates the first normally-off tri-gate GaN HEMT that can block kilovolts at 150 °C and zero gate bias. The key enabling device design is a new type of tri-gate, the junction tri-gate, which comprises p-n junction wrapping around AlGaN/GaN fins in the gate region. At 150 °C, the GaN tri-gate junction HEMT (Tri-JHEMT) retains strong gate control and stable threshold voltage, while the traditional tri-gate metal-insulator-semiconductor (MIS) HEMTs fabricated on the same wafer shows a large threshold voltage shift and inferior capabilities of voltage blocking. These results show the excellent thermal stability of GaN Tri-JHEMTs and their great potentials for power electronics applications.

Original language	English
Title of host publication	2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	139-142
Number of pages	4
ISBN (Electronic)	9784886864222
DOIs	https://doi.org/10.23919/ISPSD50666.2021.9452203
State	Published - May 30 2021
Event	33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 - Virtual, Nagoya, Japan Duration: May 30 2021 → Jun 3 2021

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2021-May
ISSN (Print)	1063-6854

Conference

Conference	33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021
Country/Territory	Japan
City	Virtual, Nagoya
Period	05/30/21 → 06/3/21

Funding

AC.NO:LEDGEMENT This work was supported in part by the 3ower Management Consortium of the Center for 3ower Electronics Systems at Virginia Tech. The E-beam lithography part of this research was partially conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science 8ser Facility. The authors thank the collaboration with Silvaco for 3-D device simulation.

Keywords

GaN
HEMT
breakdown
high temperature
junction gate
tri-gate

Access to Document

10.23919/ISPSD50666.2021.9452203

Cite this

Ma, Y., Xiao, M., Zhang, Y., Du, Z., Yan, X., Wang, H., Cheng, K., Clavel, M., Hudait, M. K., Tao, L., Lin, F., & Kravchenko, I. (2021). Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability. In 2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 (pp. 139-142). Article 9452203 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2021-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ISPSD50666.2021.9452203

@inproceedings{5e61f8e085914c679256e0b167c2f81b,

title = "Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability",

abstract = "The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates the first normally-off tri-gate GaN HEMT that can block kilovolts at 150 °C and zero gate bias. The key enabling device design is a new type of tri-gate, the junction tri-gate, which comprises p-n junction wrapping around AlGaN/GaN fins in the gate region. At 150 °C, the GaN tri-gate junction HEMT (Tri-JHEMT) retains strong gate control and stable threshold voltage, while the traditional tri-gate metal-insulator-semiconductor (MIS) HEMTs fabricated on the same wafer shows a large threshold voltage shift and inferior capabilities of voltage blocking. These results show the excellent thermal stability of GaN Tri-JHEMTs and their great potentials for power electronics applications.",

keywords = "GaN, HEMT, breakdown, high temperature, junction gate, tri-gate",

author = "Yunwei Ma and Ming Xiao and Yuhao Zhang and Zhonghao Du and Xiaodong Yan and Han Wang and Kai Cheng and Michael Clavel and Hudait, {Mantu K.} and Lei Tao and Feng Lin and Ivan Kravchenko",

note = "Publisher Copyright: {\textcopyright} 2021 The Institute of Electrical Engineering of Japan.; 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 ; Conference date: 30-05-2021 Through 03-06-2021",

year = "2021",

month = may,

day = "30",

doi = "10.23919/ISPSD50666.2021.9452203",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "139--142",

booktitle = "2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021",

}

Ma, Y, Xiao, M, Zhang, Y, Du, Z, Yan, X, Wang, H, Cheng, K, Clavel, M, Hudait, MK, Tao, L, Lin, F & Kravchenko, I 2021, Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability. in 2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021., 9452203, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2021-May, Institute of Electrical and Electronics Engineers Inc., pp. 139-142, 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021, Virtual, Nagoya, Japan, 05/30/21. https://doi.org/10.23919/ISPSD50666.2021.9452203

Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability. / Ma, Yunwei; Xiao, Ming; Zhang, Yuhao et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 139-142 9452203 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2021-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability

AU - Ma, Yunwei

AU - Xiao, Ming

AU - Zhang, Yuhao

AU - Du, Zhonghao

AU - Yan, Xiaodong

AU - Wang, Han

AU - Cheng, Kai

AU - Clavel, Michael

AU - Hudait, Mantu K.

AU - Tao, Lei

AU - Lin, Feng

AU - Kravchenko, Ivan

PY - 2021/5/30

Y1 - 2021/5/30

N2 - The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates the first normally-off tri-gate GaN HEMT that can block kilovolts at 150 °C and zero gate bias. The key enabling device design is a new type of tri-gate, the junction tri-gate, which comprises p-n junction wrapping around AlGaN/GaN fins in the gate region. At 150 °C, the GaN tri-gate junction HEMT (Tri-JHEMT) retains strong gate control and stable threshold voltage, while the traditional tri-gate metal-insulator-semiconductor (MIS) HEMTs fabricated on the same wafer shows a large threshold voltage shift and inferior capabilities of voltage blocking. These results show the excellent thermal stability of GaN Tri-JHEMTs and their great potentials for power electronics applications.

AB - The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates the first normally-off tri-gate GaN HEMT that can block kilovolts at 150 °C and zero gate bias. The key enabling device design is a new type of tri-gate, the junction tri-gate, which comprises p-n junction wrapping around AlGaN/GaN fins in the gate region. At 150 °C, the GaN tri-gate junction HEMT (Tri-JHEMT) retains strong gate control and stable threshold voltage, while the traditional tri-gate metal-insulator-semiconductor (MIS) HEMTs fabricated on the same wafer shows a large threshold voltage shift and inferior capabilities of voltage blocking. These results show the excellent thermal stability of GaN Tri-JHEMTs and their great potentials for power electronics applications.

KW - GaN

KW - HEMT

KW - breakdown

KW - high temperature

KW - junction gate

KW - tri-gate

UR - http://www.scopus.com/inward/record.url?scp=85112514657&partnerID=8YFLogxK

U2 - 10.23919/ISPSD50666.2021.9452203

DO - 10.23919/ISPSD50666.2021.9452203

M3 - Conference contribution

AN - SCOPUS:85112514657

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 139

EP - 142

BT - 2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021

Y2 - 30 May 2021 through 3 June 2021

ER -

Ma Y, Xiao M, Zhang Y, Du Z, Yan X, Wang H et al. Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability. In 2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 139-142. 9452203. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.23919/ISPSD50666.2021.9452203

Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability

Abstract

Publication series

Conference

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this