Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

C. F. Lo; T. S. Kang; L. Liu; C. Y. Chang; S. J. Pearton; I. I. Kravchenko; O. Laboutin; J. W. Johnson; F. Ren

doi:10.1063/1.3533381

Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

C. F. Lo, T. S. Kang, L. Liu, C. Y. Chang, S. J. Pearton, I. I. Kravchenko, O. Laboutin, J. W. Johnson, F. Ren

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

Nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structures showed an isolation blocking voltage of 900 V with a leakage current at 1μA/mm across an implanted isolation-gap of 10 μm between two Ohmic pads. The effect of implanted gap distance (1.7, 5, or 10 μm) between two Ohmic contact pads was evaluated. The isolation current density was determined to be solely dependent on the applied field between the contact pads. A model using a combination of resistive current and Poole-Frenkel current is consistent with the experimental data. The resistance of the isolation implantation region significantly decreased after the sample was annealed at temperatures above 600 °C.

Original language	English
Article number	262116
Journal	Applied Physics Letters
Volume	97
Issue number	26
DOIs	https://doi.org/10.1063/1.3533381
State	Published - Dec 27 2010

Funding

The work performed at UF is supported by an AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt. Part of the work conducted at the Center for Nanophase Materials Science in Oak Ridge National Laboratory was sponsored by the Scientific User Facilities Division, U.S. Department of Energy.

Access to Document

10.1063/1.3533381

Cite this

@article{771c01c2cfd14be695af808321daa4db,

title = "Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure",

abstract = "Nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structures showed an isolation blocking voltage of 900 V with a leakage current at 1μA/mm across an implanted isolation-gap of 10 μm between two Ohmic pads. The effect of implanted gap distance (1.7, 5, or 10 μm) between two Ohmic contact pads was evaluated. The isolation current density was determined to be solely dependent on the applied field between the contact pads. A model using a combination of resistive current and Poole-Frenkel current is consistent with the experimental data. The resistance of the isolation implantation region significantly decreased after the sample was annealed at temperatures above 600 °C.",

author = "Lo, {C. F.} and Kang, {T. S.} and L. Liu and Chang, {C. Y.} and Pearton, {S. J.} and Kravchenko, {I. I.} and O. Laboutin and Johnson, {J. W.} and F. Ren",

year = "2010",

month = dec,

day = "27",

doi = "10.1063/1.3533381",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

AU - Lo, C. F.

AU - Kang, T. S.

AU - Liu, L.

AU - Chang, C. Y.

AU - Pearton, S. J.

AU - Kravchenko, I. I.

AU - Laboutin, O.

AU - Johnson, J. W.

AU - Ren, F.

PY - 2010/12/27

Y1 - 2010/12/27

N2 - Nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structures showed an isolation blocking voltage of 900 V with a leakage current at 1μA/mm across an implanted isolation-gap of 10 μm between two Ohmic pads. The effect of implanted gap distance (1.7, 5, or 10 μm) between two Ohmic contact pads was evaluated. The isolation current density was determined to be solely dependent on the applied field between the contact pads. A model using a combination of resistive current and Poole-Frenkel current is consistent with the experimental data. The resistance of the isolation implantation region significantly decreased after the sample was annealed at temperatures above 600 °C.

AB - Nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structures showed an isolation blocking voltage of 900 V with a leakage current at 1μA/mm across an implanted isolation-gap of 10 μm between two Ohmic pads. The effect of implanted gap distance (1.7, 5, or 10 μm) between two Ohmic contact pads was evaluated. The isolation current density was determined to be solely dependent on the applied field between the contact pads. A model using a combination of resistive current and Poole-Frenkel current is consistent with the experimental data. The resistance of the isolation implantation region significantly decreased after the sample was annealed at temperatures above 600 °C.

UR - http://www.scopus.com/inward/record.url?scp=78650892694&partnerID=8YFLogxK

U2 - 10.1063/1.3533381

DO - 10.1063/1.3533381

M3 - Article

AN - SCOPUS:78650892694

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262116

ER -

Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this