Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor

Sazia A. Eliza; Ida Lee; Fahmida S. Tulip; Salwa Mostafa; Elias Greenbaum; M. Nance Ericson; Syed K. Islam

doi:10.1109/TNB.2011.2164809

Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor

Sazia A. Eliza, Ida Lee, Fahmida S. Tulip, Salwa Mostafa, Elias Greenbaum, M. Nance Ericson, Syed K. Islam

Sensors and Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (∼6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

Original language	English
Article number	6018311
Pages (from-to)	201-208
Number of pages	8
Journal	IEEE Transactions on Nanobioscience
Volume	10
Issue number	3
DOIs	https://doi.org/10.1109/TNB.2011.2164809
State	Published - Sep 2011

Funding

Manuscript received December 06, 2010; revised June 29, 2011; accepted August 01, 2011. Date of publication September 15, 2011; date of current version October 26, 2011. This work was supported by the Office of Biological and Environmental Research, U.S. Department of Energy (I.L., E.G.). Oak Ridge National Laboratory is managed by UT Battelle, LLC, for the U.S. Department of Energy, under Contract No. DE-AC05-00OR22725. Asterisk indicates corresponding author. *S. A. Eliza was with the Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN 37996 USA (e-mail: [email protected]).

Funders	Funder number
U.S. Department of Energy
Biological and Environmental Research
UT-Battelle	DE-AC05-00OR22725

Keywords

AlGaN/GaN HEMT
PS I
PS II
biomolecular
optoelectronic
photosynthetic complex

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/TNB.2011.2164809

Cite this

@article{d28349546025467abd76962c2c88a7e4,

title = "Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor",

abstract = "In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (∼6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.",

keywords = "AlGaN/GaN HEMT, PS I, PS II, biomolecular, optoelectronic, photosynthetic complex",

author = "Eliza, {Sazia A.} and Ida Lee and Tulip, {Fahmida S.} and Salwa Mostafa and Elias Greenbaum and Ericson, {M. Nance} and Islam, {Syed K.}",

year = "2011",

month = sep,

doi = "10.1109/TNB.2011.2164809",

language = "English",

volume = "10",

pages = "201--208",

journal = "IEEE Transactions on Nanobioscience",

issn = "1536-1241",

publisher = "Institute of Electrical and Electronics Engineers",

number = "3",

}

TY - JOUR

T1 - Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor

AU - Eliza, Sazia A.

AU - Lee, Ida

AU - Tulip, Fahmida S.

AU - Mostafa, Salwa

AU - Greenbaum, Elias

AU - Ericson, M. Nance

AU - Islam, Syed K.

PY - 2011/9

Y1 - 2011/9

N2 - In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (∼6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

AB - In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (∼6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

KW - AlGaN/GaN HEMT

KW - PS I

KW - PS II

KW - biomolecular

KW - optoelectronic

KW - photosynthetic complex

UR - http://www.scopus.com/inward/record.url?scp=80054900721&partnerID=8YFLogxK

U2 - 10.1109/TNB.2011.2164809

DO - 10.1109/TNB.2011.2164809

M3 - Article

C2 - 21926029

AN - SCOPUS:80054900721

SN - 1536-1241

VL - 10

SP - 201

EP - 208

JO - IEEE Transactions on Nanobioscience

JF - IEEE Transactions on Nanobioscience

IS - 3

M1 - 6018311

ER -

Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor

Abstract

Funding

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this