Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate

Philip D. Edmondson; Neil P. Young; Chad M. Parish; Fereydoon Namavar; William J. Weber; Yanwen Zhang

doi:10.1557/opl.2013.387

Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate

Philip D. Edmondson, Neil P. Young, Chad M. Parish, Fereydoon Namavar, William J. Weber, Yanwen Zhang

Nuclear Energy Materials Microanalysis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Thin films of nanocrystalline ceria on a Si substrate have been irradiated with 3 MeV Au+ ions to fluences of up to 1x1016 ions cm-2, at temperatures ranging between 160 to 400 K. During the irradiation, a band of contrast is observed to form at the thin film/substrate interface. Analysis by scanning transmission electron microscopy in conjunction with energy dispersive and electron energy loss spectroscopy techniques revealed that this band of contrast was a cerium silicate amorphous phase, with an approximate Ce:Si:O ratio of 1:1:3.

Original language	English
Title of host publication	Advances in Materials for Nuclear Energy
Pages	87-92
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2013.387
State	Published - 2013
Event	2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1514
ISSN (Print)	0272-9172

Conference

Conference	2012 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/25/12 → 11/30/12

Funding

Funders	Funder number
Engineering and Physical Sciences Research Council	EP/H018921/1

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/opl.2013.387

Cite this

@inproceedings{8104a9d08ae843d8b2aa5ab87e80f1cf,

title = "Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate",

abstract = "Thin films of nanocrystalline ceria on a Si substrate have been irradiated with 3 MeV Au+ ions to fluences of up to 1x1016 ions cm-2, at temperatures ranging between 160 to 400 K. During the irradiation, a band of contrast is observed to form at the thin film/substrate interface. Analysis by scanning transmission electron microscopy in conjunction with energy dispersive and electron energy loss spectroscopy techniques revealed that this band of contrast was a cerium silicate amorphous phase, with an approximate Ce:Si:O ratio of 1:1:3.",

author = "Edmondson, {Philip D.} and Young, {Neil P.} and Parish, {Chad M.} and Fereydoon Namavar and Weber, {William J.} and Yanwen Zhang",

year = "2013",

doi = "10.1557/opl.2013.387",

language = "English",

isbn = "9781605114910",

series = "Materials Research Society Symposium Proceedings",

pages = "87--92",

booktitle = "Advances in Materials for Nuclear Energy",

note = "2012 MRS Fall Meeting ; Conference date: 25-11-2012 Through 30-11-2012",

}

Edmondson, PD, Young, NP, Parish, CM, Namavar, F, Weber, WJ & Zhang, Y 2013, Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate. in Advances in Materials for Nuclear Energy. Materials Research Society Symposium Proceedings, vol. 1514, pp. 87-92, 2012 MRS Fall Meeting, Boston, MA, United States, 11/25/12. https://doi.org/10.1557/opl.2013.387

Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate. / Edmondson, Philip D.; Young, Neil P.; Parish, Chad M. et al.
Advances in Materials for Nuclear Energy. 2013. p. 87-92 (Materials Research Society Symposium Proceedings; Vol. 1514).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate

AU - Edmondson, Philip D.

AU - Young, Neil P.

AU - Parish, Chad M.

AU - Namavar, Fereydoon

AU - Weber, William J.

AU - Zhang, Yanwen

PY - 2013

Y1 - 2013

N2 - Thin films of nanocrystalline ceria on a Si substrate have been irradiated with 3 MeV Au+ ions to fluences of up to 1x1016 ions cm-2, at temperatures ranging between 160 to 400 K. During the irradiation, a band of contrast is observed to form at the thin film/substrate interface. Analysis by scanning transmission electron microscopy in conjunction with energy dispersive and electron energy loss spectroscopy techniques revealed that this band of contrast was a cerium silicate amorphous phase, with an approximate Ce:Si:O ratio of 1:1:3.

AB - Thin films of nanocrystalline ceria on a Si substrate have been irradiated with 3 MeV Au+ ions to fluences of up to 1x1016 ions cm-2, at temperatures ranging between 160 to 400 K. During the irradiation, a band of contrast is observed to form at the thin film/substrate interface. Analysis by scanning transmission electron microscopy in conjunction with energy dispersive and electron energy loss spectroscopy techniques revealed that this band of contrast was a cerium silicate amorphous phase, with an approximate Ce:Si:O ratio of 1:1:3.

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U2 - 10.1557/opl.2013.387

DO - 10.1557/opl.2013.387

M3 - Conference contribution

AN - SCOPUS:84888057230

SN - 9781605114910

T3 - Materials Research Society Symposium Proceedings

SP - 87

EP - 92

BT - Advances in Materials for Nuclear Energy

T2 - 2012 MRS Fall Meeting

Y2 - 25 November 2012 through 30 November 2012

ER -

Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate

Abstract

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Funding

UN SDGs

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