Irradiation-Driven Restructuring of UO2Thin Films: Amorphization and Crystallization

  • Ashabari Majumdar
  • , Khachatur V. Manukyan
  • , Stefania Dede
  • , Jordan M. Roach
  • , Daniel Robertson
  • , Peter C. Burns
  • , Ani Aprahamian

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Combustion synthesis in uranyl nitrate-acetylacetone-2-methoxyethanol solutions was used to deposit thin UO2 films on aluminum substrates to investigate the irradiation-induced restructuring processes. Thermal analysis revealed that the combustion reactions in these solutions are initiated at ∼160 °C. The heat released during the process and the subsequent brief annealing at 400 °C allow the deposition of polycrystalline films with 5-10 nm UO2 grains. The use of multiple deposition cycles enables tuning of the film thicknesses in the 35-260 nm range. Irradiation with Ar2+ ions (1.7 MeV energy and a fluence of up to 1 × 1017 ions/cm2) is utilized to generate a uniform distribution of atomic displacements within the films. X-ray fluorescence (XRF) and alpha-particle emission spectroscopy showed that the films were stable under irradiation and did not undergo sputtering degradation. X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry and uranium ionic concentrations remain stable during irradiation. The high-resolution electron microscopy imaging and electron diffraction analysis demonstrated that at the early stages of irradiation (below 1 × 1016 ion/cm2) UO2 films show complete amorphization and beam-induced densification (sintering), resulting in a pore-free disordered film. Prolonged irradiation (5 × 1016 ion/cm2) is shown to trigger a crystallization process at the surface of the films that moves toward the UO2/Al interface, converting the entire amorphous material into a highly crystalline film. This work reports on an entirely different radiation-induced restructuring of the nanoscale UO2 compared to the coarse-grained counterpart. The preparation of thin UO2 films deposited on Al substrates fills an area of national need within the stockpile stewardship program of the National Nuclear Security Administration and fundamental research with actinides. The method reported in this work produces pure, robust, and uniform thin-film actinide targets for nuclear science measurements.

Original languageEnglish
Pages (from-to)35153-35164
Number of pages12
JournalACS Applied Materials and Interfaces
Volume13
Issue number29
DOIs
StatePublished - Jul 28 2021
Externally publishedYes

Funding

The work was performed with financial support in parts from the U.S. Department of Energy’s (DOE) National Nuclear Security Administration (NNSA, Grant # DE-NA0003888), U.S. National Science Foundation (NSF, PHY-1713857), and JINA-CEE NSF Physics Frontiers Centers (Award #:1430152). K. Manukyan also acknowledges funding from the U.S. Army Research Office Grant # W911NF2110045 under the Materials Synthesis & Processing Program, with Dr. Michael P. Bakas as the program manager. The authors also acknowledge the Center for Environmental Science and Technology (CEST), Materials Characterization Facility (MCF), and Notre Dame Integrated Imaging Facility (NDIIF) for instrumental usage.

Keywords

  • UOthin films
  • amorphization
  • ion irradiation
  • recrystallization
  • solution combustion synthesis

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