Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

T. Koyanagi; K. Shimoda; S. Kondo; T. Hinoki; K. Ozawa; Y. Katoh

doi:10.1016/j.jnucmat.2014.04.018

Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

T. Koyanagi, K. Shimoda, S. Kondo, T. Hinoki, K. Ozawa, Y. Katoh

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Abstract

The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 °C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. The apparent stress exponent of the irradiation creep slightly exceeded unity, and instantaneous creep coefficient at 380-790 °C was estimated to be ∼1 × 10^-5 [MPa^-1 dpa^-1] at ∼0.1 dpa and 1 × 10^-7 to 1 × 10^-6 [MPa^-1 dpa^-1] at ∼1 dpa. The irradiation creep strain appeared greater than that for the high purity SiC. Microstructural observation and data analysis indicated that the grain-boundary sliding associated with the secondary phases contributes to the irradiation creep at 380-790 °C to 0.01-0.11 dpa.

Original language	English
Pages (from-to)	73-80
Number of pages	8
Journal	Journal of Nuclear Materials
Volume	455
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jnucmat.2014.04.018
State	Published - Dec 2014

Funding

This work was supported by Office of Fusion Energy Sciences , U.S. Department of Energy under contract DE-C05-00OR22725 with UT-Battelle, LLC, and US–Japan TITAN Collaboration on Fusion Blanket Technology and Materials. Research was supported in part by High Flux Isotope Reactor, which is sponsored by the Office of Basic Energy Sciences, U.S. Department of Energy.

Funders	Funder number
Office of Basic Energy Sciences
U.S. Department of Energy	DE-C05-00OR22725
Fusion Energy Sciences

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10.1016/j.jnucmat.2014.04.018

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title = "Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences",

abstract = "The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 °C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. The apparent stress exponent of the irradiation creep slightly exceeded unity, and instantaneous creep coefficient at 380-790 °C was estimated to be ∼1 × 10-5 [MPa-1 dpa-1] at ∼0.1 dpa and 1 × 10-7 to 1 × 10-6 [MPa-1 dpa-1] at ∼1 dpa. The irradiation creep strain appeared greater than that for the high purity SiC. Microstructural observation and data analysis indicated that the grain-boundary sliding associated with the secondary phases contributes to the irradiation creep at 380-790 °C to 0.01-0.11 dpa.",

author = "T. Koyanagi and K. Shimoda and S. Kondo and T. Hinoki and K. Ozawa and Y. Katoh",

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T1 - Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

AU - Koyanagi, T.

AU - Shimoda, K.

AU - Kondo, S.

AU - Hinoki, T.

AU - Ozawa, K.

AU - Katoh, Y.

PY - 2014/12

Y1 - 2014/12

N2 - The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 °C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. The apparent stress exponent of the irradiation creep slightly exceeded unity, and instantaneous creep coefficient at 380-790 °C was estimated to be ∼1 × 10-5 [MPa-1 dpa-1] at ∼0.1 dpa and 1 × 10-7 to 1 × 10-6 [MPa-1 dpa-1] at ∼1 dpa. The irradiation creep strain appeared greater than that for the high purity SiC. Microstructural observation and data analysis indicated that the grain-boundary sliding associated with the secondary phases contributes to the irradiation creep at 380-790 °C to 0.01-0.11 dpa.

AB - The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 °C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. The apparent stress exponent of the irradiation creep slightly exceeded unity, and instantaneous creep coefficient at 380-790 °C was estimated to be ∼1 × 10-5 [MPa-1 dpa-1] at ∼0.1 dpa and 1 × 10-7 to 1 × 10-6 [MPa-1 dpa-1] at ∼1 dpa. The irradiation creep strain appeared greater than that for the high purity SiC. Microstructural observation and data analysis indicated that the grain-boundary sliding associated with the secondary phases contributes to the irradiation creep at 380-790 °C to 0.01-0.11 dpa.

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Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

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