IR imaging of integrated circuit power transistors during operation

H. Wang; R. B. Dinwiddie; H. Maleki; J. Oglesbee; C. Thongsouk

doi:10.1117/12.459555

IR imaging of integrated circuit power transistors during operation

H. Wang, R. B. Dinwiddie, H. Maleki, J. Oglesbee, C. Thongsouk

Nuclear Energy Materials Microanalysis

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

An infrared microscope was used to study the surface temperature profiles of power transistor arrays in integrated circuits (IC) during operation. Each transistor array was set to conduct current for 20-50 microseconds. The integration time of the IR camera is adjusted to be between 2 and 10 microseconds. A thorough study of the camera&s timing characteristics allows its precise synchronization to transient thermal events in the transistor arrays. Progressively adding incremental delay times to the synchronization pulses allows the complete characterization of the thermal transients as a function of time and location. The IR microscope timing characteristics were determined by imaging an incandescent lamp filament during pulsed operation. Examples of heat pulses in a lamp filament and power transistors are given.

Original language	English
Pages (from-to)	80-86
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4710
DOIs	https://doi.org/10.1117/12.459555
State	Published - 2002

Keywords

IR microscope
Infrared imaging
Synchronization and integrated circuit
Transistor
Triggering

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10.1117/12.459555

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abstract = "An infrared microscope was used to study the surface temperature profiles of power transistor arrays in integrated circuits (IC) during operation. Each transistor array was set to conduct current for 20-50 microseconds. The integration time of the IR camera is adjusted to be between 2 and 10 microseconds. A thorough study of the camera&s timing characteristics allows its precise synchronization to transient thermal events in the transistor arrays. Progressively adding incremental delay times to the synchronization pulses allows the complete characterization of the thermal transients as a function of time and location. The IR microscope timing characteristics were determined by imaging an incandescent lamp filament during pulsed operation. Examples of heat pulses in a lamp filament and power transistors are given.",

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AU - Wang, H.

AU - Dinwiddie, R. B.

AU - Maleki, H.

AU - Oglesbee, J.

AU - Thongsouk, C.

PY - 2002

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AB - An infrared microscope was used to study the surface temperature profiles of power transistor arrays in integrated circuits (IC) during operation. Each transistor array was set to conduct current for 20-50 microseconds. The integration time of the IR camera is adjusted to be between 2 and 10 microseconds. A thorough study of the camera&s timing characteristics allows its precise synchronization to transient thermal events in the transistor arrays. Progressively adding incremental delay times to the synchronization pulses allows the complete characterization of the thermal transients as a function of time and location. The IR microscope timing characteristics were determined by imaging an incandescent lamp filament during pulsed operation. Examples of heat pulses in a lamp filament and power transistors are given.

KW - IR microscope

KW - Infrared imaging

KW - Synchronization and integrated circuit

KW - Transistor

KW - Triggering

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JF - Proceedings of SPIE - The International Society for Optical Engineering

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IR imaging of integrated circuit power transistors during operation

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Keywords

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