TY - JOUR
T1 - Ionic liquid versus SiO2 gated A-IGZO thin film transistors
T2 - A direct comparison
AU - Pudasaini, Pushpa Raj
AU - Noh, Joo Hyon
AU - Wong, Anthony
AU - Haglund, Amanda V.
AU - Dai, Sheng
AU - Ward, Thomas Zac
AU - Mandrus, David
AU - Rack, Philip D.
N1 - Publisher Copyright:
© 2015 The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - Ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ∼105, a promising field effect mobility of 14.20 cm2V-1s-1, and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V-1s-1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be "frozen-in" by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZOTFT "ON" and "OFF" state, respectively,which could lead to newswitching and possibly non-volatile memory applications.
AB - Ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ∼105, a promising field effect mobility of 14.20 cm2V-1s-1, and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V-1s-1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be "frozen-in" by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZOTFT "ON" and "OFF" state, respectively,which could lead to newswitching and possibly non-volatile memory applications.
UR - http://www.scopus.com/inward/record.url?scp=84941060828&partnerID=8YFLogxK
U2 - 10.1149/2.0141509jss
DO - 10.1149/2.0141509jss
M3 - Article
AN - SCOPUS:84941060828
SN - 2162-8769
VL - 4
SP - Q105-Q109
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 9
ER -