Abstract
Ionic liquids are used to induce reversible large area polarization switching in ultrathin and highly defective ferroelectric films. Long range electrostatic charge control is induced by modifying the electric double layer at an ionic liquid–PbZr 0.2 Ti 0.8 O 3 interface with electrostatic and electrochemical control of polarization orientation in the ferroelectric layer. The localized nature of the ionic gating mechanism prohibits the presence of leakage current, which has historically limited the switching of ultrathin and/or electrically leaky ferroelectric films in solid metal-gated capacitor devices. This is demonstrated on ultrathin films and in massively defective films with >30% coverage of direct conducting channels running from surface to ground. This approach opens new design possibilities for integrating ultrathin ferroelectric films in functional electronic devices.
| Original language | English |
|---|---|
| Article number | 1801723 |
| Journal | Advanced Materials Interfaces |
| Volume | 6 |
| Issue number | 5 |
| DOIs | |
| State | Published - Mar 8 2019 |
Funding
This work was supported by the US Department of Energy (DOE) Office of Science, Early Career Research Program and Basic Energy Sciences, Materials Sciences and Engineering Division (film growth, structural and electronic characterization, scanning probes, modeling). PDR acknowledges support from the Center for Nanophase Materials Sciences (CNMS), which is a US DOE, Office of Science User Facility. Device fabrication supported by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US DOE. ToF-SIMS and PFM were conducted through user proposal at the CNMS, which is a US DOE, Office of Science User Facility.
Keywords
- device structure
- ferroelectrics
- ionic gating
- ionic liquids
- polarization switching