Ion velocity effect governs damage annealing process in defective KTaO3

G. Velişa, D. Iancu, E. Zarkadoula, Y. Tong, Y. Zhang, W. J. Weber

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Effects of electronic to nuclear energy losses (S e/S n) ratio on damage evolution in defective KTaO3 have been investigated by irradiating pre-damaged single crystal KTaO3 with intermediate energy O ions (6 MeV, 8 MeV and 12 MeV) at 300 K. By exploring these processes in pre-damaged KTaO3 containing a fractional disorder level of 0.35, the results demonstrate the occurrence of a precursory stage of damage production before the onset of damage annealing process in defective KTaO3 that decreases with O ion energy. The observed ionization-induced annealing process by ion channeling analysis has been further mirrored by high resolution transmission electron microscopy analysis. In addition, the reduction of disorder level is accompanied by the broadening of the disorder profiles to greater depth with increasing ion fluence, and enhanced migration is observed with decreasing O ion energy. Since S e (∼3.0 keV nm−1) is nearly constant for all 3 ion energies across the pre-damaged depth, the difference in behavior is due to the so-called ‘velocity effect’: the lower ion velocity below the Bragg peak yields a confined spread of the electron cascade and hence an increased energy deposition density. The inelastic thermal spike calculation has further confirmed the existence of a velocity effect, not previously reported in KTaO3 or very scarcely reported in other materials for which the existence of ionization-induced annealing has been reported.

Original languageEnglish
Article number365303
JournalJournal of Physics D: Applied Physics
Volume57
Issue number36
DOIs
StatePublished - Sep 13 2024

Keywords

  • defect analyses
  • defects simulation
  • HTEM
  • KTaO
  • velocity effect

Fingerprint

Dive into the research topics of 'Ion velocity effect governs damage annealing process in defective KTaO3'. Together they form a unique fingerprint.

Cite this