Ion migration induced bipolar diode effect and ferroelectricity modulation in CuInP2S6

Dongke Rong, Cheng Tian, Jie Xing, Qiao Jin, Fangyuan Ma, Guozhen Liu, Jie Qiu, Changchun Zhao, Huiying Hao, Jingjing Dong, Hao Liu, Youguo Shi, Er Jia Guo

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The coupling between ferroelectricity and ion conductivity always presents unique physical and chemical properties, making it crucial to understand their correlation for the development of advanced functional devices. CuInP2S6 (CIPS), a van der Waals “ferroionic” material, serves as an excellent platform to investigate their intercoupling. In this study, we observe a bipolar diode-like rectification behavior in a vertical Pt/CIPS/In capacitor by controlling the migration of Cu ions. The non-uniform distribution of mobile Cu ions is coupled with ferroelectricity, resulting in a switchable imprint field and an enhanced saturation polarization about 12 μC/cm2 in CIPS. Additionally, CIPS exhibits a significant photovoltaic response due to its robust built-in electric field caused by the unbalanced distribution of Cu ions. This work demonstrates a controllable Cu ions migration and its manipulation on the electrical transport and ferroelectricity in CIPS. The dynamically tunable bipolar diode effect, closely coupled with ferroelectricity in CIPS, has promising prospects in self-powered photodetectors, memristors, and neuromorphic computing.

Original languageEnglish
Article number181902
JournalApplied Physics Letters
Volume122
Issue number18
DOIs
StatePublished - May 1 2023
Externally publishedYes

Funding

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11974318 and 12074282).

FundersFunder number
National Natural Science Foundation of China12074282, 11974318

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