Abstract
Traditional understanding of the thermal boundary resistance (TBR) across solid-solid interfaces posits that the vibrational densities of states overlap between materials dictates interfacial energy transport, with phonon scattering occurring at the interface. Using atomistic simulations, we show a mechanism for control of TBR; point defects near an interface can lead to both short- and midrange disorder, accelerating the conversion of vibrational energy between bulk and interfacial modes, ultimately reducing the TBR. We experimentally demonstrate this reduction through ion irradiation of gallium nitride and subsequently measuring the TBR across Al/GaN interfaces.
| Original language | English |
|---|---|
| Article number | 165421 |
| Journal | Physical Review B |
| Volume | 109 |
| Issue number | 16 |
| DOIs | |
| State | Published - Apr 15 2024 |
| Externally published | Yes |
Funding
We appreciate support from the Office of Naval Research through a MURI program, Grant No. N00014-18-1-2429. We appreciate support from the National Science Foundation, Grant No. 2318576. A.G. acknowledges funding from the Office of Naval Research, Grant No. N00014-21-1-2622. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE's National Nuclear Security Administration under Contract No. DE-NA-0003525. The views expressed in the paper do not necessarily represent the views of the U.S. DOE or the United States Government.