Abstract
A high fluence of boron (B) has been ion implanted into Si by use of a B cathodic-arc plasma generator. The purpose was to demonstrate the viability of the technique for B p-doping. Operation of a pure solid B cathode in a cathodic arc depends on a patented technique for consolidation of the cathode. The target sample ({100} semiconductor Si) was contained within an exposed area of some 10 cm2, upon which the effective pure B+ ion current was about 30 mA/cm2 for a total effective B+ current of 300 mA. The 100% singly ionized B plasma contained virtually no non-boron ions, molecular radicals or neutral atoms. The arrangement was of the PIII type within the forward projecting plume, with bias of -500 V. The applied fluence was 3.5 × 1017/cm2 divided on to two pulses of 1 s each. Analysis was primarily by RBS/ion channeling and by the 11B(p, α)8Be reaction. The retained dose was 6.1 × 10 16/cm2 or about 18% of the applied fluence. If sputter saturation is assumed, the implied sputter yield is 0.3, a value that agrees with the TRIM-calculated yield at saturation. Amorphization depth was 9.2 nm including the oxide and 8.4 nm if Si in the SiO2 is subtracted. Etching with HF reduced the retained B to 4.5 × 1016/cm 2. Macroparticle filtering was unsophisticated. Macroparticles adhering were 1500/cm2 for this high applied dose. That value would scale to 1/cm2 for an applied dose of 2 × 10 14/cm2. Expansion of the plume to larger areas and other parameter changes will allow adaptation of the technique to shallow junction and other p-doping.
Original language | English |
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Pages (from-to) | 278-283 |
Number of pages | 6 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 237 |
Issue number | 1-2 |
DOIs | |
State | Published - Aug 2005 |
Externally published | Yes |
Event | Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - Duration: Oct 25 2004 → Oct 27 2004 |
Keywords
- Amorphization
- Boron
- Cathodic arc
- Doping
- Shallow junction
- Silicon