Abstract
Damage in single-crystal β-SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering/channeling and cross-section transmission electron microscopy. Samples were implanted with A1 (130 keV) and Si (87 keV) with doses between 4 and 20X1014 cm-2 at liquid nitrogen and room temperatures. Backscattering spectra for He+ channeling as a function of implantation dose were initially obtained in the [110] direction to determine damage accumulation. However, the backscattered yield along this direction was shown to be enhanced as a result of uniaxial implantation-induced strain along [ 100]. Spectra obtained by channeling along this latter direction were used along with the computer program trim to calculate the critical energy for amorphization. The results for amorphization of β-SiC at liquid nitrogen and room temperature are ~14.5 eV/atom and —22.5 eV/atom respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 321-328 |
| Number of pages | 8 |
| Journal | Journal of Materials Research |
| Volume | 3 |
| Issue number | 2 |
| DOIs | |
| State | Published - Apr 1988 |
| Externally published | Yes |
Funding
The authors gratefully acknowledge the support of this program by the Office of Naval Research under Contract No. N00014-87-K-0182 and to the ONR Fellowship program for support of one of the authors (Edmond). Work at Oak Ridge was sponsored by U. S. Department of Energy, Division of Materials Science under Contract No. DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc., and by Oak Ridge Associated Universities/University Programs Division under Contract No. DE-ACO5-76OROOO33.