Abstract
Implantation of 2 MeV ions of Au or Cu into single crystals of MgO (100) at room temperature results in the spontaneous formation of metallic nanoclusters for implantation fluences above a threshold value. The formation and growth of these clusters may be induced by post implantation bombardment with silicon ions which stop beyond the implantation layer, as well as by thermal annealing. We have compared spontaneous nanocluster formation, ion bombardment induced cluster formation and post thermal annealing. The size and number of nanoclusters were studied by optical absorption spectroscopy and using the Mie and Doyle theories which relate the optical absorption bands to the formation of nanoclusters. The post bombardment of the gold implanted samples was made with 1.2, 2.0 and 5.0 MeV silicon ions. The depth and distribution of the gold and silicon were observed using RBS.
| Original language | English |
|---|---|
| Pages (from-to) | 1064-1068 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 148 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - 1999 |
Funding
Research supported by the Center for Irradiation of Materials, Alabama A&M University, US Army Research Office Contract No. DAAH04-96-1-0127 and the US Department of Energy, under contract DE-AC05-96OR22464 with Lockheed Martin Energy Research Corp.
| Funders | Funder number |
|---|---|
| Alabama A&M University | |
| U.S. Department of Energy | DE-AC05-96OR22464 |
| Army Research Office | DAAH04-96-1-0127 |
Keywords
- Implantation
- Nanoclusters
- Optical materials