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Ion beam modification of topological insulator bismuth selenide
P. A. Sharma
, A. L. Lima Sharma
, M. Hekmaty
, K. Hattar
, V. Stavila
, R. Goeke
, K. Erickson
, D. L. Medlin
,
M. Brahlek
, N. Koirala
, S. Oh
Research output
:
Contribution to journal
›
Article
›
peer-review
22
Scopus citations
Overview
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Material Science
Ion Implantation
100%
Bismuth
100%
X-Ray Diffraction
20%
Doping (Additives)
20%
Carrier Concentration
20%
Transmission Electron Microscopy
20%
Thin Films
20%
Engineering
Ion Implantation
100%
Ray Diffraction
20%
Dopants
20%
Structural Damage
20%
Thin Films
20%
Carrier Concentration
20%