Abstract
Thin films of β-SiC have been grown epitaxically on 6H α-SiC substrates by direct deposition of alternating layers of 13C+ and 30Si+. The carbon and silicon ions were obtained from an ion implanter by decelerating mass-analyzed ion beams down to 40 eV. The substrate was held at 700°C during growth. Rutherford backscattering and high resolution transmission electron microscopy techniques have been used to determine the composition and structure of the resulting β-SiC layer and the nature of the interface. This is the first reported use of the ion beam deposition technique to grow β-SiC films and demonstrates the capability of using alternating beam deposition to prepare compound structures.
| Original language | English |
|---|---|
| Pages (from-to) | 1065-1068 |
| Number of pages | 4 |
| Journal | Vacuum |
| Volume | 39 |
| Issue number | 11-12 |
| DOIs | |
| State | Published - 1989 |
Funding
The authors thank RF Davis and J Bumgamer at North Carolina State University for supplying the 6H Cc-Sic substrate crystals and L F Allard at Oak Ridge National Laboratory for help with the image simulations. This research was sponsored by the Division of Materials Sciences, U.S. Department of Energy and also by the Assistant Secretary for Conservation and Renewable Energy, Office of Transportation Systems, as part of the High-Temperature Materials Laboratory Program under contract DE-AC05840R21400 with Martin Marietta Energy Systems, Inc.