Investigation on the parallel operation of discrete SiC BJTs and JFETs

This paper presents an analysis of single discrete silicon carbide (SiC) JFET and BJT devices and their parallel operation. The static and dynamic characteristics of the devices were obtained over a wide range of temperature to study the scaling of device parameters. The static parameters like on-resistance, threshold voltage, current gains, transconductance, and leakage currents were extracted to show how these parameters would scale as the devices are paralleled. A detailed analysis of the dynamic current sharing between the paralleled devices during the switching transients and energy losses at different voltages and currents is also presented. The effect of the gate driver on the device transient behavior of the paralleled devices was studied, and it was shown that faster switching speeds of the devices could cause mismatches in current shared during transients.