TY - GEN
T1 - Investigation on diode surge forward current ruggedness of Si and SiC power modules
AU - Carastro, Fabio
AU - Mari, Jorge
AU - Zoels, Thomas
AU - Rowden, Brian
AU - Losee, Peter
AU - Stevanovic, Ljubisa
N1 - Publisher Copyright:
© 2016 IEEE and EPE Association.
PY - 2016/10/25
Y1 - 2016/10/25
N2 - This paper investigates the behavior of selected Si-PiN and SiC (BD-MOS & SBD) FWD in multichip power modules during current surge event conditions. Surges can occur in high power converters used for motor drives and grid connected systems. A novel testbench and testing procedure is introduced which allows fairly rapid type-test characterization of modules without the need to perform manual-intensive module characterization after each test. Based on the limited tests done so far, it can be seen that Si PiN diodes still retain an advantage as far as surge current limitation is concerned, followed by Mosfet body diodes in SiC with Schottky diodes in SiC at the last place. Experimental and manufacturer data are here combined into a transient thermal model which helps understand the destruction mechanisms.
AB - This paper investigates the behavior of selected Si-PiN and SiC (BD-MOS & SBD) FWD in multichip power modules during current surge event conditions. Surges can occur in high power converters used for motor drives and grid connected systems. A novel testbench and testing procedure is introduced which allows fairly rapid type-test characterization of modules without the need to perform manual-intensive module characterization after each test. Based on the limited tests done so far, it can be seen that Si PiN diodes still retain an advantage as far as surge current limitation is concerned, followed by Mosfet body diodes in SiC with Schottky diodes in SiC at the last place. Experimental and manufacturer data are here combined into a transient thermal model which helps understand the destruction mechanisms.
KW - BD-MOS (Body Diode MOSFET)
KW - Free Wheel Diode (FWD)
KW - Schottky Barrier Diode (SBD)
KW - Silicon Carbide (SiC)
UR - http://www.scopus.com/inward/record.url?scp=84996848407&partnerID=8YFLogxK
U2 - 10.1109/EPE.2016.7695685
DO - 10.1109/EPE.2016.7695685
M3 - Conference contribution
AN - SCOPUS:84996848407
T3 - 2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe
BT - 2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe
Y2 - 5 September 2016 through 9 September 2016
ER -