Investigation of TiN seed layers for RABiTS architectures with a single-crystal-like out-of-plane texture

C. Cantoni; A. Goyal; U. Schoop; X. Li; M. W. Rupich; C. Thieme; A. A. Gapud; T. Kodenkandath; T. Aytug; M. Paranthaman; K. Kim; J. D. Budai; D. K. Christen

doi:10.1109/TASC.2005.848691

Investigation of TiN seed layers for RABiTS architectures with a single-crystal-like out-of-plane texture

C. Cantoni, A. Goyal, U. Schoop, X. Li, M. W. Rupich, C. Thieme, A. A. Gapud, T. Kodenkandath, T. Aytug, M. Paranthaman, K. Kim, J. D. Budai, D. K. Christen

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Sharpening of the substrate texture is key to obtain critical current densities approaching single crystal values in coated conductors. In particular, great improvements in J_c are obtained by narrowing the substrate texture down to values of 3-4° for both phi-scan and omega-scan FWHM. The best Ni-alloy substrates used today for RABiTS show FWHM's of 6-5°. Although the majority of buffer layers deposited on these tapes by various techniques approximately duplicate the substrate's grain alignment, some materials have been found to develop much sharper out-of-plane texture. Here we report on growth and structural characterization of TiN seed layers on various textured metal tapes. TiN seed layers deposited by PLD have consistently shown tilting of the c-axis toward the direction of the sample's surface normal. We address the extent of such tilt and discuss feasibility of alternative RABiTS architectures that use a TiN seed layer to provide very sharp out-of-plane texture and serve as an effective metal-ion diffusion barrier.

Original language	English
Pages (from-to)	2981-2984
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2 PART III
DOIs	https://doi.org/10.1109/TASC.2005.848691
State	Published - Jun 2005

Funding

Manuscript received October 5, 2001. This work was sponsored by the U.S. Department of Energy under contract DE-AC05-00OR22725 with the Oak Ridge National Laboratory, managed by UT-Battelle, LLC. C. Cantoni, A. Goyal, A. A. Gapud, T. Aytug, M. Paranthaman, J. D. Budai, and D. K. Christen are with the Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA (e-mail: [email protected]). U. Schoop, X. Li, M. W. Rupich, C. Thieme, and T. Kodenkandath are with the American Superconductor Corporation, Westborough, MA 01581, USA (e-mail: [email protected]). K. Kim is with ORNL and the University of Florida, Gainesville, FL 32611, USA (e-mail: [email protected]). Digital Object Identifier 10.1109/TASC.2005.848691

Funders	Funder number
UT-Battelle
U.S. Department of Energy	DE-AC05-00OR22725
Oak Ridge National Laboratory

Keywords

Buffer layers for coated conductors
Critical current density
Epitaxial layers on textured metals
Ni-alloys
TiN
XRD texture

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10.1109/TASC.2005.848691

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Cantoni, C., Goyal, A., Schoop, U., Li, X., Rupich, M. W., Thieme, C., Gapud, A. A., Kodenkandath, T., Aytug, T., Paranthaman, M., Kim, K., Budai, J. D., & Christen, D. K. (2005). Investigation of TiN seed layers for RABiTS architectures with a single-crystal-like out-of-plane texture. IEEE Transactions on Applied Superconductivity, 15(2 PART III), 2981-2984. https://doi.org/10.1109/TASC.2005.848691

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title = "Investigation of TiN seed layers for RABiTS architectures with a single-crystal-like out-of-plane texture",

abstract = "Sharpening of the substrate texture is key to obtain critical current densities approaching single crystal values in coated conductors. In particular, great improvements in Jc are obtained by narrowing the substrate texture down to values of 3-4° for both phi-scan and omega-scan FWHM. The best Ni-alloy substrates used today for RABiTS show FWHM's of 6-5°. Although the majority of buffer layers deposited on these tapes by various techniques approximately duplicate the substrate's grain alignment, some materials have been found to develop much sharper out-of-plane texture. Here we report on growth and structural characterization of TiN seed layers on various textured metal tapes. TiN seed layers deposited by PLD have consistently shown tilting of the c-axis toward the direction of the sample's surface normal. We address the extent of such tilt and discuss feasibility of alternative RABiTS architectures that use a TiN seed layer to provide very sharp out-of-plane texture and serve as an effective metal-ion diffusion barrier.",

keywords = "Buffer layers for coated conductors, Critical current density, Epitaxial layers on textured metals, Ni-alloys, TiN, XRD texture",

author = "C. Cantoni and A. Goyal and U. Schoop and X. Li and Rupich, {M. W.} and C. Thieme and Gapud, {A. A.} and T. Kodenkandath and T. Aytug and M. Paranthaman and K. Kim and Budai, {J. D.} and Christen, {D. K.}",

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Cantoni, C, Goyal, A, Schoop, U, Li, X, Rupich, MW, Thieme, C, Gapud, AA, Kodenkandath, T, Aytug, T , Paranthaman, M, Kim, K, Budai, JD & Christen, DK 2005, 'Investigation of TiN seed layers for RABiTS architectures with a single-crystal-like out-of-plane texture', IEEE Transactions on Applied Superconductivity, vol. 15, no. 2 PART III, pp. 2981-2984. https://doi.org/10.1109/TASC.2005.848691

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T1 - Investigation of TiN seed layers for RABiTS architectures with a single-crystal-like out-of-plane texture

AU - Cantoni, C.

AU - Goyal, A.

AU - Schoop, U.

AU - Li, X.

AU - Rupich, M. W.

AU - Thieme, C.

AU - Gapud, A. A.

AU - Kodenkandath, T.

AU - Aytug, T.

AU - Paranthaman, M.

AU - Kim, K.

AU - Budai, J. D.

AU - Christen, D. K.

PY - 2005/6

Y1 - 2005/6

N2 - Sharpening of the substrate texture is key to obtain critical current densities approaching single crystal values in coated conductors. In particular, great improvements in Jc are obtained by narrowing the substrate texture down to values of 3-4° for both phi-scan and omega-scan FWHM. The best Ni-alloy substrates used today for RABiTS show FWHM's of 6-5°. Although the majority of buffer layers deposited on these tapes by various techniques approximately duplicate the substrate's grain alignment, some materials have been found to develop much sharper out-of-plane texture. Here we report on growth and structural characterization of TiN seed layers on various textured metal tapes. TiN seed layers deposited by PLD have consistently shown tilting of the c-axis toward the direction of the sample's surface normal. We address the extent of such tilt and discuss feasibility of alternative RABiTS architectures that use a TiN seed layer to provide very sharp out-of-plane texture and serve as an effective metal-ion diffusion barrier.

AB - Sharpening of the substrate texture is key to obtain critical current densities approaching single crystal values in coated conductors. In particular, great improvements in Jc are obtained by narrowing the substrate texture down to values of 3-4° for both phi-scan and omega-scan FWHM. The best Ni-alloy substrates used today for RABiTS show FWHM's of 6-5°. Although the majority of buffer layers deposited on these tapes by various techniques approximately duplicate the substrate's grain alignment, some materials have been found to develop much sharper out-of-plane texture. Here we report on growth and structural characterization of TiN seed layers on various textured metal tapes. TiN seed layers deposited by PLD have consistently shown tilting of the c-axis toward the direction of the sample's surface normal. We address the extent of such tilt and discuss feasibility of alternative RABiTS architectures that use a TiN seed layer to provide very sharp out-of-plane texture and serve as an effective metal-ion diffusion barrier.

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KW - Critical current density

KW - Epitaxial layers on textured metals

KW - Ni-alloys

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KW - XRD texture

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ER -

Investigation of TiN seed layers for RABiTS architectures with a single-crystal-like out-of-plane texture

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