Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

Ze Ni; Sheng Zheng; Madhu Sudhan Chinthavali; Dong Cao

doi:10.1109/ECCE44975.2020.9236121

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

Ze Ni, Sheng Zheng, Madhu Sudhan Chinthavali, Dong Cao

Electrification and Energy Infrastructur

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

Original language	English
Title of host publication	ECCE 2020 - IEEE Energy Conversion Congress and Exposition
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3376-3382
Number of pages	7
ISBN (Electronic)	9781728158266
DOIs	https://doi.org/10.1109/ECCE44975.2020.9236121
State	Published - Oct 11 2020
Event	12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020 - Virtual, Detroit, United States Duration: Oct 11 2020 → Oct 15 2020

Publication series

Name	ECCE 2020 - IEEE Energy Conversion Congress and Exposition

Conference

Conference	12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020
Country/Territory	United States
City	Virtual, Detroit
Period	10/11/20 → 10/15/20

Funding

ACKNOWLEDGMENT This research was supported in part by an appointment to the Oak Ridge National Laboratory ASTRO Program, administered by the Oak Ridge Institute for Science and Education and sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy. This paper has been authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).

Keywords

Si IGBT
SiC MOSFET
condition monitoring
junction temperature
medium-voltage
reliability
temperature-sensitive electrical parameter

Access to Document

10.1109/ECCE44975.2020.9236121

Cite this

Ni, Z., Zheng, S., Chinthavali, M. S., & Cao, D. (2020). Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices. In ECCE 2020 - IEEE Energy Conversion Congress and Exposition (pp. 3376-3382). Article 9236121 (ECCE 2020 - IEEE Energy Conversion Congress and Exposition). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE44975.2020.9236121

Ni, Ze ; Zheng, Sheng ; Chinthavali, Madhu Sudhan et al. / Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices. ECCE 2020 - IEEE Energy Conversion Congress and Exposition. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 3376-3382 (ECCE 2020 - IEEE Energy Conversion Congress and Exposition).

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title = "Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices",

abstract = "This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.",

keywords = "Si IGBT, SiC MOSFET, condition monitoring, junction temperature, medium-voltage, reliability, temperature-sensitive electrical parameter",

author = "Ze Ni and Sheng Zheng and Chinthavali, {Madhu Sudhan} and Dong Cao",

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Ni, Z, Zheng, S, Chinthavali, MS & Cao, D 2020, Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices. in ECCE 2020 - IEEE Energy Conversion Congress and Exposition., 9236121, ECCE 2020 - IEEE Energy Conversion Congress and Exposition, Institute of Electrical and Electronics Engineers Inc., pp. 3376-3382, 12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020, Virtual, Detroit, United States, 10/11/20. https://doi.org/10.1109/ECCE44975.2020.9236121

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices. / Ni, Ze; Zheng, Sheng; Chinthavali, Madhu Sudhan et al.
ECCE 2020 - IEEE Energy Conversion Congress and Exposition. Institute of Electrical and Electronics Engineers Inc., 2020. p. 3376-3382 9236121 (ECCE 2020 - IEEE Energy Conversion Congress and Exposition).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ni, Ze

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AU - Chinthavali, Madhu Sudhan

AU - Cao, Dong

PY - 2020/10/11

Y1 - 2020/10/11

N2 - This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

AB - This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

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KW - SiC MOSFET

KW - condition monitoring

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PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Ni Z, Zheng S, Chinthavali MS, Cao D. Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices. In ECCE 2020 - IEEE Energy Conversion Congress and Exposition. Institute of Electrical and Electronics Engineers Inc. 2020. p. 3376-3382. 9236121. (ECCE 2020 - IEEE Energy Conversion Congress and Exposition). doi: 10.1109/ECCE44975.2020.9236121

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

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