Abstract
This article presents six groups of dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The physical mechanisms of the temperature dependence of these parameters are analyzed with the difference between SiC and Si devices highlighted. A test platform is developed that enables implementation of the temperature relevant dynamic characterization. The investigated TSEPs are summarized in terms of their relationship with junction temperature, load current, dc voltage, and external gate resistance. The impact of the parasitic parameters on the evaluation results is analyzed. The comparison between 3.3-kV 5-A SiC MOSFETs and 3-kV 12-A Si insulated-gate bipolar transistors (IGBTs) is conducted. The results verify that for the medium-voltage SiC MOSFETs, the turn-off drain-source voltage switching rate, the turn-off gate current peak value, and the turn-on gate current plateau achieve better thermal sensitivity, in comparison with the Si IGBTs. The turn-off and turn-on delay time exhibit better thermal linearity compared with other investigated TSEPs.
| Original language | English |
|---|---|
| Pages (from-to) | 6408-6423 |
| Number of pages | 16 |
| Journal | IEEE Journal of Emerging and Selected Topics in Power Electronics |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 1 2021 |
Funding
This work was supported in part by an appointment to the Oak Ridge National Laboratory ASTRO Program, administered by the Oak Ridge Institute for Science and Education and sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy (DOE) under Contract DE-AC05-00OR22725.
Keywords
- Condition monitoring
- Junction temperature
- Medium voltage (MV)
- Reliability
- Silicon (Si) insulated-gate bipolar transistor (IGBT)
- Silicon carbide (SiC) MOSFET
- Temperature-sensitive electrical parameter (TSEP)