Investigation of 980 nm GaInAs/GaAs/GaInP QW high power lasers

Lijun Wang; Shengli Wu; Yun Liu; Yongqiang Ning; J. Diaz; I. Eliashevich; H. J. Yi; M. Razeghi

doi:10.1117/12.319596

Investigation of 980 nm GaInAs/GaAs/GaInP QW high power lasers

Lijun Wang
, Shengli Wu
, Yun Liu
, Yongqiang Ning
, J. Diaz
, I. Eliashevich
, H. J. Yi
, M. Razeghi

Research output: Contribution to journal › Conference article › peer-review

Abstract

980 nm GaInAs/GaAs/GaInP separate-confinement heterostructure single quantum well lasers are fabricated by LP-MOCVD. The lasers exhibit threshold current density of 170 A/cm², output light power 2 W in continuous wave (CW), slope efficiencies of 0.91 W/A without mirror coating. The characteristic temperature T₀ is 330° K.

Original language	English
Pages (from-to)	102-104
Number of pages	3
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3547
DOIs	https://doi.org/10.1117/12.319596
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 Conference on Semiconductor Lasers III - Beijing, China Duration: Sep 16 1998 → Sep 18 1998

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@article{f25139d0e8574eb797e0e0decdf6e848,

title = "Investigation of 980 nm GaInAs/GaAs/GaInP QW high power lasers",

abstract = "980 nm GaInAs/GaAs/GaInP separate-confinement heterostructure single quantum well lasers are fabricated by LP-MOCVD. The lasers exhibit threshold current density of 170 A/cm2, output light power 2 W in continuous wave (CW), slope efficiencies of 0.91 W/A without mirror coating. The characteristic temperature T0 is 330° K.",

author = "Lijun Wang and Shengli Wu and Yun Liu and Yongqiang Ning and J. Diaz and I. Eliashevich and Yi, \{H. J.\} and M. Razeghi",

year = "1998",

doi = "10.1117/12.319596",

language = "English",

volume = "3547",

pages = "102--104",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Proceedings of the 1998 Conference on Semiconductor Lasers III ; Conference date: 16-09-1998 Through 18-09-1998",

}

TY - JOUR

T1 - Investigation of 980 nm GaInAs/GaAs/GaInP QW high power lasers

AU - Wang, Lijun

AU - Wu, Shengli

AU - Liu, Yun

AU - Ning, Yongqiang

AU - Diaz, J.

AU - Eliashevich, I.

AU - Yi, H. J.

AU - Razeghi, M.

PY - 1998

Y1 - 1998

N2 - 980 nm GaInAs/GaAs/GaInP separate-confinement heterostructure single quantum well lasers are fabricated by LP-MOCVD. The lasers exhibit threshold current density of 170 A/cm2, output light power 2 W in continuous wave (CW), slope efficiencies of 0.91 W/A without mirror coating. The characteristic temperature T0 is 330° K.

AB - 980 nm GaInAs/GaAs/GaInP separate-confinement heterostructure single quantum well lasers are fabricated by LP-MOCVD. The lasers exhibit threshold current density of 170 A/cm2, output light power 2 W in continuous wave (CW), slope efficiencies of 0.91 W/A without mirror coating. The characteristic temperature T0 is 330° K.

UR - https://www.scopus.com/pages/publications/0032291681

U2 - 10.1117/12.319596

DO - 10.1117/12.319596

M3 - Conference article

AN - SCOPUS:0032291681

SN - 0277-786X

VL - 3547

SP - 102

EP - 104

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 Conference on Semiconductor Lasers III

Y2 - 16 September 1998 through 18 September 1998

ER -

Investigation of 980 nm GaInAs/GaAs/GaInP QW high power lasers

Abstract

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