Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions

Jia Zhang; Yan Wang; X. G. Zhang; X. F. Han

doi:10.1103/PhysRevB.82.134449

Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions

Jia Zhang, Yan Wang, X. G. Zhang, X. F. Han

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13 Scopus citations

Abstract

The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions is studied from first principles. It is shown that with the increase in the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-antiferromagnetic ordering of Cr, is the cause for the oscillatory TMR.

Original language	English
Article number	134449
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	82
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevB.82.134449
State	Published - Oct 29 2010
Externally published	Yes

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abstract = "The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions is studied from first principles. It is shown that with the increase in the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-antiferromagnetic ordering of Cr, is the cause for the oscillatory TMR.",

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AU - Zhang, Jia

AU - Wang, Yan

AU - Zhang, X. G.

AU - Han, X. F.

PY - 2010/10/29

Y1 - 2010/10/29

N2 - The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions is studied from first principles. It is shown that with the increase in the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-antiferromagnetic ordering of Cr, is the cause for the oscillatory TMR.

AB - The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions is studied from first principles. It is shown that with the increase in the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-antiferromagnetic ordering of Cr, is the cause for the oscillatory TMR.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 13

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ER -

Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions

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