Interpreting oscillatory Bragg peak positions

This work describes a detector-fixed method in which X-ray photons are collected on different points of the sensitive area of the detector without movement of the detector and which is suitable for measuring a single-crystal orientation using (ω, ψ) rotations. This method was used to determine the orientation of a silicon wafer whose (100) plane makes a small angle (misorientation angle) with the surface. ω scans of the 400 reflection were measured as a function of ψ while Χ and 2θ were fixed at 0 and 69°, respectively.