Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials

Liangbo Liang; Alexander A. Puretzky; Bobby G. Sumpter; Vincent Meunier

doi:10.1039/c7nr05839j

Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials

Liangbo Liang, Alexander A. Puretzky, Bobby G. Sumpter, Vincent Meunier

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Two-dimensional (2D) layered materials have been extensively studied owing to their fascinating and technologically relevant properties. Their functionalities can be often tailored by the interlayer stacking pattern. Low-frequency (LF) Raman spectroscopy provides a quick, non-destructive and inexpensive optical technique for stacking characterization, since the intensities of LF interlayer vibrational modes are sensitive to the details of the stacking. A simple and generalized interlayer bond polarizability model is proposed here to explain and predict how the LF Raman intensities depend on complex stacking sequences for any thickness in a broad array of 2D materials, including graphene, MoS₂, MoSe₂, NbSe₂, Bi₂Se₃, GaSe, h-BN, etc. Additionally, a general strategy is proposed to unify the stacking nomenclature for these 2D materials. Our model reveals the fundamental mechanism of LF Raman response to the stacking, and provides general rules for stacking identification.

Original language	English
Pages (from-to)	15340-15355
Number of pages	16
Journal	Nanoscale
Volume	9
Issue number	40
DOIs	https://doi.org/10.1039/c7nr05839j
State	Published - Oct 28 2017

Funding

L. L. was supported by Eugene P. Wigner Fellowship at Oak Ridge National Laboratory. L. L. A. A. P. and B. G. S. acknowledge work at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. V.M. acknowledges support by NSF Grant EFRI 2-DARE (EFRI-1542707). This manuscript has been authored by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/ doe-public-access-plan).

Funders	Funder number
LLC
UT-Battelle
National Science Foundation	EFRI-1542707, EFRI 2-DARE
Oak Ridge National Laboratory

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abstract = "Two-dimensional (2D) layered materials have been extensively studied owing to their fascinating and technologically relevant properties. Their functionalities can be often tailored by the interlayer stacking pattern. Low-frequency (LF) Raman spectroscopy provides a quick, non-destructive and inexpensive optical technique for stacking characterization, since the intensities of LF interlayer vibrational modes are sensitive to the details of the stacking. A simple and generalized interlayer bond polarizability model is proposed here to explain and predict how the LF Raman intensities depend on complex stacking sequences for any thickness in a broad array of 2D materials, including graphene, MoS2, MoSe2, NbSe2, Bi2Se3, GaSe, h-BN, etc. Additionally, a general strategy is proposed to unify the stacking nomenclature for these 2D materials. Our model reveals the fundamental mechanism of LF Raman response to the stacking, and provides general rules for stacking identification.",

author = "Liangbo Liang and Puretzky, {Alexander A.} and Sumpter, {Bobby G.} and Vincent Meunier",

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PY - 2017/10/28

Y1 - 2017/10/28

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Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials

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