Interfacial charge and strain effects on the ferroelectric behavior of epitaxial (001) PbTiO3 films on (110) DyScO3 substrates

M. J. Highland; D. D. Fong; G. B. Stephenson; T. T. Fister; P. H. Fuoss; S. K. Streiffer; Carol Thompson; M. I. Richard; J. A. Eastman

doi:10.1063/1.4869579

Interfacial charge and strain effects on the ferroelectric behavior of epitaxial (001) PbTiO₃ films on (110) DyScO₃ substrates

M. J. Highland, D. D. Fong, G. B. Stephenson, T. T. Fister, P. H. Fuoss, S. K. Streiffer, Carol Thompson, M. I. Richard, J. A. Eastman

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13 Scopus citations

Abstract

In-situ synchrotron x-ray observations reveal that the ferroelectric behavior of epitaxial (001) PbTiO₃ thin films grown on (110) DyScO₃ substrates depends on both film thickness and interfacial electrical properties. A 92-nm-thick film was found to exhibit an a/c domain structure with a ferroelectric Curie temperature similar to that theoretically predicted based on the strain state. In contrast, 6-nm-thick films contained only c-oriented domains, and the ferroelectric behavior was found to depend strongly on the nature of the electrical boundary condition at the buried interface.

Original language	English
Article number	132901
Journal	Applied Physics Letters
Volume	104
Issue number	13
DOIs	https://doi.org/10.1063/1.4869579
State	Published - Mar 31 2014
Externally published	Yes

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title = "Interfacial charge and strain effects on the ferroelectric behavior of epitaxial (001) PbTiO3 films on (110) DyScO3 substrates",

abstract = "In-situ synchrotron x-ray observations reveal that the ferroelectric behavior of epitaxial (001) PbTiO3 thin films grown on (110) DyScO3 substrates depends on both film thickness and interfacial electrical properties. A 92-nm-thick film was found to exhibit an a/c domain structure with a ferroelectric Curie temperature similar to that theoretically predicted based on the strain state. In contrast, 6-nm-thick films contained only c-oriented domains, and the ferroelectric behavior was found to depend strongly on the nature of the electrical boundary condition at the buried interface.",

author = "Highland, {M. J.} and Fong, {D. D.} and Stephenson, {G. B.} and Fister, {T. T.} and Fuoss, {P. H.} and Streiffer, {S. K.} and Carol Thompson and Richard, {M. I.} and Eastman, {J. A.}",

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AU - Highland, M. J.

AU - Fong, D. D.

AU - Stephenson, G. B.

AU - Fister, T. T.

AU - Fuoss, P. H.

AU - Streiffer, S. K.

AU - Thompson, Carol

AU - Richard, M. I.

AU - Eastman, J. A.

PY - 2014/3/31

Y1 - 2014/3/31

N2 - In-situ synchrotron x-ray observations reveal that the ferroelectric behavior of epitaxial (001) PbTiO3 thin films grown on (110) DyScO3 substrates depends on both film thickness and interfacial electrical properties. A 92-nm-thick film was found to exhibit an a/c domain structure with a ferroelectric Curie temperature similar to that theoretically predicted based on the strain state. In contrast, 6-nm-thick films contained only c-oriented domains, and the ferroelectric behavior was found to depend strongly on the nature of the electrical boundary condition at the buried interface.

AB - In-situ synchrotron x-ray observations reveal that the ferroelectric behavior of epitaxial (001) PbTiO3 thin films grown on (110) DyScO3 substrates depends on both film thickness and interfacial electrical properties. A 92-nm-thick film was found to exhibit an a/c domain structure with a ferroelectric Curie temperature similar to that theoretically predicted based on the strain state. In contrast, 6-nm-thick films contained only c-oriented domains, and the ferroelectric behavior was found to depend strongly on the nature of the electrical boundary condition at the buried interface.

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JF - Applied Physics Letters

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Interfacial charge and strain effects on the ferroelectric behavior of epitaxial (001) PbTiO₃ films on (110) DyScO₃ substrates

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