Interfacial charge and strain effects on the ferroelectric behavior of epitaxial (001) PbTiO3 films on (110) DyScO3 substrates

M. J. Highland, D. D. Fong, G. B. Stephenson, T. T. Fister, P. H. Fuoss, S. K. Streiffer, Carol Thompson, M. I. Richard, J. A. Eastman

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12 Scopus citations

Abstract

In-situ synchrotron x-ray observations reveal that the ferroelectric behavior of epitaxial (001) PbTiO3 thin films grown on (110) DyScO3 substrates depends on both film thickness and interfacial electrical properties. A 92-nm-thick film was found to exhibit an a/c domain structure with a ferroelectric Curie temperature similar to that theoretically predicted based on the strain state. In contrast, 6-nm-thick films contained only c-oriented domains, and the ferroelectric behavior was found to depend strongly on the nature of the electrical boundary condition at the buried interface.

Original languageEnglish
Article number132901
JournalApplied Physics Letters
Volume104
Issue number13
DOIs
StatePublished - Mar 31 2014
Externally publishedYes

Funding

FundersFunder number
Office of Basic Energy Sciences
Office of Science
U.S. Department of Energy

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