Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate

Y. T. Cui; R. G. Moore; A. M. Zhang; Y. Tian; J. J. Lee; F. T. Schmitt; W. H. Zhang; W. Li; M. Yi; Z. K. Liu; M. Hashimoto; Y. Zhang; D. H. Lu; T. P. Devereaux; L. L. Wang; X. C. Ma; Q. M. Zhang; Q. K. Xue; D. H. Lee; Z. X. Shen

doi:10.1103/PhysRevLett.114.037002

Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate

Y. T. Cui, R. G. Moore, A. M. Zhang, Y. Tian, J. J. Lee, F. T. Schmitt, W. H. Zhang, W. Li, M. Yi, Z. K. Liu, M. Hashimoto, Y. Zhang, D. H. Lu, T. P. Devereaux, L. L. Wang, X. C. Ma, Q. M. Zhang, Q. K. Xue, D. H. Lee, Z. X. Shen

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Abstract

We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped SrTiO3, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near the FeSe/SrTiO3 interface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.

Original language	English
Article number	037002
Journal	Physical Review Letters
Volume	114
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.114.037002
State	Published - Jan 22 2015
Externally published	Yes

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Cui, Y. T., Moore, R. G., Zhang, A. M., Tian, Y., Lee, J. J., Schmitt, F. T., Zhang, W. H., Li, W., Yi, M., Liu, Z. K., Hashimoto, M., Zhang, Y., Lu, D. H., Devereaux, T. P., Wang, L. L., Ma, X. C., Zhang, Q. M., Xue, Q. K., Lee, D. H., & Shen, Z. X. (2015). Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate. Physical Review Letters, 114(3), Article 037002. https://doi.org/10.1103/PhysRevLett.114.037002

@article{491d3409e5bd4281a080b4d6a57e6f9d,

title = "Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate",

abstract = "We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped SrTiO3, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near the FeSe/SrTiO3 interface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.",

author = "Cui, {Y. T.} and Moore, {R. G.} and Zhang, {A. M.} and Y. Tian and Lee, {J. J.} and Schmitt, {F. T.} and Zhang, {W. H.} and W. Li and M. Yi and Liu, {Z. K.} and M. Hashimoto and Y. Zhang and Lu, {D. H.} and Devereaux, {T. P.} and Wang, {L. L.} and Ma, {X. C.} and Zhang, {Q. M.} and Xue, {Q. K.} and Lee, {D. H.} and Shen, {Z. X.}",

note = "Publisher Copyright: {\textcopyright} 2015 American Physical Society.",

year = "2015",

month = jan,

day = "22",

doi = "10.1103/PhysRevLett.114.037002",

language = "English",

volume = "114",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "3",

}

Cui, YT, Moore, RG, Zhang, AM, Tian, Y, Lee, JJ, Schmitt, FT, Zhang, WH, Li, W, Yi, M, Liu, ZK, Hashimoto, M, Zhang, Y, Lu, DH, Devereaux, TP, Wang, LL, Ma, XC, Zhang, QM, Xue, QK, Lee, DH & Shen, ZX 2015, 'Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate', Physical Review Letters, vol. 114, no. 3, 037002. https://doi.org/10.1103/PhysRevLett.114.037002

TY - JOUR

T1 - Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate

AU - Cui, Y. T.

AU - Moore, R. G.

AU - Zhang, A. M.

AU - Tian, Y.

AU - Lee, J. J.

AU - Schmitt, F. T.

AU - Zhang, W. H.

AU - Li, W.

AU - Yi, M.

AU - Liu, Z. K.

AU - Hashimoto, M.

AU - Zhang, Y.

AU - Lu, D. H.

AU - Devereaux, T. P.

AU - Wang, L. L.

AU - Ma, X. C.

AU - Zhang, Q. M.

AU - Xue, Q. K.

AU - Lee, D. H.

AU - Shen, Z. X.

PY - 2015/1/22

Y1 - 2015/1/22

N2 - We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped SrTiO3, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near the FeSe/SrTiO3 interface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.

AB - We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped SrTiO3, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near the FeSe/SrTiO3 interface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.

UR - http://www.scopus.com/inward/record.url?scp=84921475722&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.114.037002

DO - 10.1103/PhysRevLett.114.037002

M3 - Article

AN - SCOPUS:84921475722

SN - 0031-9007

VL - 114

JO - Physical Review Letters

JF - Physical Review Letters

IS - 3

M1 - 037002

ER -

Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate

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