Abstract
Depositing Pd or Au on n-InP at cryogenic substrate temperatures has previously been found to significantly increase the barrier height of the resulting Schottky diode. Cross-sectional transmission electron microscopy (XTEM) has been performed on Pd/InP and Au/InP interfaces formed at room temperature (RT) and low temperature (LT) to determine the differences responsible for the change in barrier height. In the Pd case, a solid state amorphization which occurs at the interface upon RT metal deposition is nearly eliminated in as-deposited LT Pd/InP diodes. In the Au case, RT deposition results in the initial monolayers of Au entering the InP lattice, while no such effect was observed in the LT Au/InP diodes. It is clear that the LT deposition dramatically reduces the interaction between the metal and substrate, resulting in a greater barrier height. Enhanced barrier height Schottky diodes are crucial to the development of optical and electronic devices on InP. Preliminary results will be discussed on metal-semiconductor-metal (MSM) photodetectors and metal-semiconductor field-effect-transistors (MESFET's) fabricated using the LT process.
| Original language | English |
|---|---|
| Pages (from-to) | 257-262 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 421 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |