Abstract
Atomic-scale details of the interaction of a 1/3 〈1 1 2̄ 0〉 (0 0 0 1) edge dislocation, which dissociates in the basal plane, with four typical vacancy and self-interstitial atom (SIA) clusters created by displacement cascades in α-zirconium are investigated by computer modelling. A triangular cluster of SIAs lying within a basal atomic plane adjacent to the dislocation glide plane is not absorbed by the dislocation but is pushed along by the leading partial. A 3-D SIA cluster lying across the glide plane is completely absorbed by the dislocation by creation of two super-jogs. The dislocation also climbs by interaction with a prismatic vacancy cluster, but only half of the vacancies are absorbed in this case. For a cluster formed from a basal platelet of vacancies, the dislocation experiences a glide resistance, but both the line and cluster are fully restored after breakaway. Stress-strain curves and the critical stress for dislocation breakaway from a cluster are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 49-53 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering: A |
| Volume | 400-401 |
| Issue number | 1-2 SUPPL. |
| DOIs | |
| State | Published - Jul 25 2005 |
Funding
This research was supported by grant FIKS-CT-2001-00137 (‘SIRENA’) from the Council of the European Commission and by contract T27L92-F56398 with Electricité de France.
Keywords
- Computer simulation
- Dislocation-obstacle strength
- Extended dislocation
- Point defect clusters
- Zirconium
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