Integration of a dose control circuit with a vertically aligned nanofiber field emission device

T. Rahman; S. K. Islam; R. Vijayaraghavan; T. Gundman; S. A. Eliza; A. Hossain; B. Blalock; S. J. Randolph; L. R. Baylor; T. S. Bigelow; W. L. Gardner; M. N. Ericson; J. A. Moore

doi:10.1116/1.2409958

Integration of a dose control circuit with a vertically aligned nanofiber field emission device

T. Rahman, S. K. Islam, R. Vijayaraghavan, T. Gundman, S. A. Eliza, A. Hossain, B. Blalock, S. J. Randolph, L. R. Baylor, T. S. Bigelow, W. L. Gardner, M. N. Ericson, J. A. Moore

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8 Scopus citations

Abstract

This article presents the integration of a dose control circuit (DCC) with vertically aligned carbon nanofiber (VACNF) field emission devices through a voltage boost up interface circuit for the implementation of the digital electrostatically focused e-beam array direct-write lithography concept. The VACNFs act as diodes with high turn on voltage (∼70 V). Commercially available complementary metal-oxide-semiconductor technology is not capable of handling such magnitude of voltages. The voltage boost up interface circuit described in this article offers an efficient technique to shift the voltage level to a level adequate to start the emission of electron from the tips of the VACNFs. The integration of the DCC with the VACNF emitters via a voltage boost up interface circuit presented in this article facilitates the operation of the VACNFs for etching in maskless lithography while providing precise control of emission.

Original language	English
Pages (from-to)	655-660
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	2
DOIs	https://doi.org/10.1116/1.2409958
State	Published - 2007

Funding

This research was sponsored by the Defense Advanced Research Projects Agency (DARPA) under Contract No. DARPA-MIPR-97-1357.

Funders	Funder number
Defense Advanced Research Projects Agency

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Rahman, T., Islam, S. K., Vijayaraghavan, R., Gundman, T., Eliza, S. A., Hossain, A., Blalock, B., Randolph, S. J., Baylor, L. R., Bigelow, T. S., Gardner, W. L., Ericson, M. N., & Moore, J. A. (2007). Integration of a dose control circuit with a vertically aligned nanofiber field emission device. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(2), 655-660. https://doi.org/10.1116/1.2409958

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title = "Integration of a dose control circuit with a vertically aligned nanofiber field emission device",

abstract = "This article presents the integration of a dose control circuit (DCC) with vertically aligned carbon nanofiber (VACNF) field emission devices through a voltage boost up interface circuit for the implementation of the digital electrostatically focused e-beam array direct-write lithography concept. The VACNFs act as diodes with high turn on voltage (∼70 V). Commercially available complementary metal-oxide-semiconductor technology is not capable of handling such magnitude of voltages. The voltage boost up interface circuit described in this article offers an efficient technique to shift the voltage level to a level adequate to start the emission of electron from the tips of the VACNFs. The integration of the DCC with the VACNF emitters via a voltage boost up interface circuit presented in this article facilitates the operation of the VACNFs for etching in maskless lithography while providing precise control of emission.",

author = "T. Rahman and Islam, {S. K.} and R. Vijayaraghavan and T. Gundman and Eliza, {S. A.} and A. Hossain and B. Blalock and Randolph, {S. J.} and Baylor, {L. R.} and Bigelow, {T. S.} and Gardner, {W. L.} and Ericson, {M. N.} and Moore, {J. A.}",

year = "2007",

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Rahman, T, Islam, SK, Vijayaraghavan, R, Gundman, T, Eliza, SA, Hossain, A, Blalock, B, Randolph, SJ, Baylor, LR , Bigelow, TS, Gardner, WL, Ericson, MN & Moore, JA 2007, 'Integration of a dose control circuit with a vertically aligned nanofiber field emission device', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 2, pp. 655-660. https://doi.org/10.1116/1.2409958

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AU - Rahman, T.

AU - Islam, S. K.

AU - Vijayaraghavan, R.

AU - Gundman, T.

AU - Eliza, S. A.

AU - Hossain, A.

AU - Blalock, B.

AU - Randolph, S. J.

AU - Baylor, L. R.

AU - Bigelow, T. S.

AU - Gardner, W. L.

AU - Ericson, M. N.

AU - Moore, J. A.

PY - 2007

Y1 - 2007

N2 - This article presents the integration of a dose control circuit (DCC) with vertically aligned carbon nanofiber (VACNF) field emission devices through a voltage boost up interface circuit for the implementation of the digital electrostatically focused e-beam array direct-write lithography concept. The VACNFs act as diodes with high turn on voltage (∼70 V). Commercially available complementary metal-oxide-semiconductor technology is not capable of handling such magnitude of voltages. The voltage boost up interface circuit described in this article offers an efficient technique to shift the voltage level to a level adequate to start the emission of electron from the tips of the VACNFs. The integration of the DCC with the VACNF emitters via a voltage boost up interface circuit presented in this article facilitates the operation of the VACNFs for etching in maskless lithography while providing precise control of emission.

AB - This article presents the integration of a dose control circuit (DCC) with vertically aligned carbon nanofiber (VACNF) field emission devices through a voltage boost up interface circuit for the implementation of the digital electrostatically focused e-beam array direct-write lithography concept. The VACNFs act as diodes with high turn on voltage (∼70 V). Commercially available complementary metal-oxide-semiconductor technology is not capable of handling such magnitude of voltages. The voltage boost up interface circuit described in this article offers an efficient technique to shift the voltage level to a level adequate to start the emission of electron from the tips of the VACNFs. The integration of the DCC with the VACNF emitters via a voltage boost up interface circuit presented in this article facilitates the operation of the VACNFs for etching in maskless lithography while providing precise control of emission.

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Integration of a dose control circuit with a vertically aligned nanofiber field emission device

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