Insulator-to-metal transition induced by disorder in a model for manganites

C. Şen, G. Alvarez, E. Dagotto

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49 Scopus citations

Abstract

The physics of manganites appears to be dominated by phase competition among ferromagnetic metallic and charge-ordered antiferromagnetic insulating states. Previous investigations [Burgy et al., Phys. Rev. Lett. 87, 277202 (2001)] have shown that quenched disorder is important to smear the first-order transition between those competing states, and induce nanoscale inhomogeneities that produce the colossal magnetoresistance effect. Recent studies [Motome et al., Phys. Rev. Lett. 91, 167204 (2003)] have provided further evidence that disorder is crucial in the manganite context, unveiling an unexpected insulator-to-metal transition triggered by disorder in a one-orbital model with cooperative phonons. In this paper, a qualitative explanation for this effect is presented. It is argued that the transition occurs for disorder in the form of local random energies. Acting over an insulating states made out of a checkerboard arrangement of charge, with "effective" site energies positive and negative, this form of disorder can produce lattice sites with an effective energy near zero, favorable for the transport of charge. This explanation is based on Monte Carlo simulations and the study of simplified toy models, calculating the density-of-states, cluster conductances using the Landauer formalism, and other observables. A percolative picture emerges. The applicability of these ideas to real manganites is discussed.

Original languageEnglish
Article number064428
Pages (from-to)064428-1-064428-14
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number6
DOIs
StatePublished - Aug 2004
Externally publishedYes

Funding

with us, and for comments on the manuscript. The authors also acknowledge the help of J. A. Vergés in the study of the conductance. The subroutines used in this context were kindly provided by him. The authors are supported by the NSF Grants No. DMR-0122523, No. DMR-0312333, and No. DMR-0303348. Additional funds have been provided by Martech (FSU). The authors are very thankful to Y. Motome, N. Furukawa, and N. Nagaosa for sharing their ideas about Ref.

FundersFunder number
National Science FoundationDMR-0312333
Directorate for Mathematical and Physical Sciences0312333, 0122523, 0303348

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