Abstract
The InSb(100) surface was grown using the techniques of molecular-beam expitaxy. The surface was found to undergo several surface reconstructions, including a c(4×4), a c(8×2), an asymmetric (1×3), a symmetric (1×3), and a (1×1). High-resolution photoemission spectra of the In and Sb 4d core levels clearly exhibited surface-shifted components for some of these reconstructed surfaces. Analyses of the In and Sb core-level photoemission intensities as well as of the surface to bulk intensity ratios for the c(4×4) and c(8×2) structures were carried out. The c(4×4) surface was found to be terminated with 1(3/4 monolayers of Sb, while (3/4 monolayer of In was found to be the termination of the c(8×2) surface. Structural models are proposed for the c(8×2) and c(4×4) based upon these coverages and upon existing models of the similar GaAs(100) structures.
| Original language | English |
|---|---|
| Pages (from-to) | 1730-1737 |
| Number of pages | 8 |
| Journal | Physical Review B |
| Volume | 39 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1989 |
| Externally published | Yes |