Abstract
The initial oxidation of GaAs(110) is studied with high-resolution photoemission. The Ga and As 3d core levels of atoms within two to three atomic layers from the surface show small oxygen-induced shifts at about half-monolayer oxygen coverage [corresponding to about 107 L (1 L = 10-6 Torr sec) oxygen exposure]. The surface As atoms with a large chemical shift of 3.0 eV are significantly produced only at much higher oxygen exposures.
| Original language | English |
|---|---|
| Pages (from-to) | 7034-7037 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 29 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1984 |
| Externally published | Yes |