Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

Y. Shi; B. Liu; L. Liu; J. H. Edgar; H. M. Meyer; E. A. Payzant; L. R. Walker; N. D. Evans; J. G. Swadener; J. Chaudhuri; Joy Chaudhuri

doi:10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

Y. Shi
, B. Liu
, L. Liu
, J. H. Edgar
, H. M. Meyer
, E. A. Payzant
, L. R. Walker
, N. D. Evans
, J. G. Swadener
, J. Chaudhuri
, Joy Chaudhuri

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

Original language	English
Pages (from-to)	757-762
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S
State	Published - Nov 2001

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10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

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Shi, Y., Liu, B., Liu, L., Edgar, J. H., Meyer, H. M., Payzant, E. A., Walker, L. R., Evans, N. D., Swadener, J. G., Chaudhuri, J., & Chaudhuri, J. (2001). Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate. Physica Status Solidi (A) Applied Research, 188(2), 757-762. https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

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title = "Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate",

abstract = "Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.",

author = "Y. Shi and B. Liu and L. Liu and Edgar, \{J. H.\} and Meyer, \{H. M.\} and Payzant, \{E. A.\} and Walker, \{L. R.\} and Evans, \{N. D.\} and Swadener, \{J. G.\} and J. Chaudhuri and Joy Chaudhuri",

year = "2001",

month = nov,

doi = "10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S",

language = "English",

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journal = "Physica Status Solidi (A) Applied Research",

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Shi, Y, Liu, B, Liu, L, Edgar, JH, Meyer, HM , Payzant, EA, Walker, LR, Evans, ND, Swadener, JG, Chaudhuri, J & Chaudhuri, J 2001, 'Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate', Physica Status Solidi (A) Applied Research, vol. 188, no. 2, pp. 757-762. https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

TY - JOUR

T1 - Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

AU - Shi, Y.

AU - Liu, B.

AU - Liu, L.

AU - Edgar, J. H.

AU - Meyer, H. M.

AU - Payzant, E. A.

AU - Walker, L. R.

AU - Evans, N. D.

AU - Swadener, J. G.

AU - Chaudhuri, J.

AU - Chaudhuri, Joy

PY - 2001/11

Y1 - 2001/11

N2 - Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

AB - Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

UR - https://www.scopus.com/pages/publications/18044403846

U2 - 10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

DO - 10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

M3 - Article

AN - SCOPUS:18044403846

SN - 0031-8965

VL - 188

SP - 757

EP - 762

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

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