Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

Y. Shi; B. Liu; L. Liu; J. H. Edgar; H. M. Meyer; E. A. Payzant; L. R. Walker; N. D. Evans; J. G. Swadener; J. Chaudhuri; Joy Chaudhuri

doi:10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

Y. Shi, B. Liu, L. Liu, J. H. Edgar, H. M. Meyer, E. A. Payzant, L. R. Walker, N. D. Evans, J. G. Swadener, J. Chaudhuri, Joy Chaudhuri

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

Original language	English
Pages (from-to)	757-762
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S
State	Published - Nov 2001

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10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

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Shi, Y., Liu, B., Liu, L., Edgar, J. H., Meyer, H. M., Payzant, E. A., Walker, L. R., Evans, N. D., Swadener, J. G., Chaudhuri, J., & Chaudhuri, J. (2001). Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate. Physica Status Solidi (A) Applied Research, 188(2), 757-762. https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

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abstract = "Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.",

author = "Y. Shi and B. Liu and L. Liu and Edgar, {J. H.} and Meyer, {H. M.} and Payzant, {E. A.} and Walker, {L. R.} and Evans, {N. D.} and Swadener, {J. G.} and J. Chaudhuri and Joy Chaudhuri",

year = "2001",

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doi = "10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S",

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Shi, Y, Liu, B, Liu, L, Edgar, JH, Meyer, HM , Payzant, EA, Walker, LR, Evans, ND, Swadener, JG, Chaudhuri, J & Chaudhuri, J 2001, 'Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate', Physica Status Solidi (A) Applied Research, vol. 188, no. 2, pp. 757-762. https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

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T1 - Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

AU - Shi, Y.

AU - Liu, B.

AU - Liu, L.

AU - Edgar, J. H.

AU - Meyer, H. M.

AU - Payzant, E. A.

AU - Walker, L. R.

AU - Evans, N. D.

AU - Swadener, J. G.

AU - Chaudhuri, J.

AU - Chaudhuri, Joy

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AB - Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

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JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate

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