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Influence of symmetry mismatch on heteroepitaxial growth of perovskite thin films

  • D. L. Proffit
  • , H. W. Jang
  • , S. Lee
  • , C. T. Nelson
  • , X. Q. Pan
  • , M. S. Rzchowski
  • , C. B. Eom

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

Epitaxial thin films of (110) orthorhombic CaRuO3 grown on orthorhombic (110) NdGaO3 and cubic (001) (LaAlO3) 0.3-(Sr2AlTaO6) 0.7 (LSAT) substrates serve as a model system isolating the influence of oxygen octahedron distortion on epitaxial growth of thin films. CaRuO3 grows as a coherent single crystal on NdGaO3 with an atomically smooth surface, whereas CaRuO3 on LSAT is multidomain with a rough surface despite the equivalent film stoichoimetry and average lattice mismatch between CaRuO 3 and the substrates. Anisotropic metallic resistivity of the single crystal CaRuO3 was observed at 10 K with different electrical behaviors as a function of temperature for [1̄10] and [001] in-plane directions.

Original languageEnglish
Article number111912
JournalApplied Physics Letters
Volume93
Issue number11
DOIs
StatePublished - 2008
Externally publishedYes

Funding

The authors gratefully acknowledge the financial support of the National Science Foundation through Grant No. ECCS-0708759, Department of Energy through Grant No. DE-FG02-06ER46346, and David Lucile Packard Fellowship (CBE).

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