Abstract
Epitaxial thin films of (110) orthorhombic CaRuO3 grown on orthorhombic (110) NdGaO3 and cubic (001) (LaAlO3) 0.3-(Sr2AlTaO6) 0.7 (LSAT) substrates serve as a model system isolating the influence of oxygen octahedron distortion on epitaxial growth of thin films. CaRuO3 grows as a coherent single crystal on NdGaO3 with an atomically smooth surface, whereas CaRuO3 on LSAT is multidomain with a rough surface despite the equivalent film stoichoimetry and average lattice mismatch between CaRuO 3 and the substrates. Anisotropic metallic resistivity of the single crystal CaRuO3 was observed at 10 K with different electrical behaviors as a function of temperature for [1̄10] and [001] in-plane directions.
Original language | English |
---|---|
Article number | 111912 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 11 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Funding
The authors gratefully acknowledge the financial support of the National Science Foundation through Grant No. ECCS-0708759, Department of Energy through Grant No. DE-FG02-06ER46346, and David Lucile Packard Fellowship (CBE).
Funders | Funder number |
---|---|
National Science Foundation | ECCS-0708759 |
U.S. Department of Energy | DE-FG02-06ER46346 |