Influence of symmetry mismatch on heteroepitaxial growth of perovskite thin films

D. L. Proffit, H. W. Jang, S. Lee, C. T. Nelson, X. Q. Pan, M. S. Rzchowski, C. B. Eom

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Abstract

Epitaxial thin films of (110) orthorhombic CaRuO3 grown on orthorhombic (110) NdGaO3 and cubic (001) (LaAlO3) 0.3-(Sr2AlTaO6) 0.7 (LSAT) substrates serve as a model system isolating the influence of oxygen octahedron distortion on epitaxial growth of thin films. CaRuO3 grows as a coherent single crystal on NdGaO3 with an atomically smooth surface, whereas CaRuO3 on LSAT is multidomain with a rough surface despite the equivalent film stoichoimetry and average lattice mismatch between CaRuO 3 and the substrates. Anisotropic metallic resistivity of the single crystal CaRuO3 was observed at 10 K with different electrical behaviors as a function of temperature for [1̄10] and [001] in-plane directions.

Original languageEnglish
Article number111912
JournalApplied Physics Letters
Volume93
Issue number11
DOIs
StatePublished - 2008
Externally publishedYes

Funding

The authors gratefully acknowledge the financial support of the National Science Foundation through Grant No. ECCS-0708759, Department of Energy through Grant No. DE-FG02-06ER46346, and David Lucile Packard Fellowship (CBE).

FundersFunder number
National Science FoundationECCS-0708759
U.S. Department of EnergyDE-FG02-06ER46346

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