Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of 16O

T. P. Sjoreen; O. W. Holland; D. Fathy; K. More; R. F. Davis

doi:10.1016/0168-583X(85)90311-8

Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of ¹⁶O

T. P. Sjoreen, O. W. Holland, D. Fathy, K. More, R. F. Davis

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10 Scopus citations

Abstract

The dependence of near-surface crystallinity on substrate heating during high dose O⁺ implantation into Si and post-implantation annealing was studied. It is shown that the damage morphology in the crystalline region above the SiO₂ layer is very sensitive to substrate temperature and that, under optimum implant conditions which minimize damage conditions in the near surface, annealing does not improve the near surface crystallinity. Rutherford backscattering/channeling spectroscopy and cross-sectional transmission electron microscopy were used to analyze the microstructure of the samples.

Original language	English
Pages (from-to)	574-579
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	10-11
Issue number	PART 1
DOIs	https://doi.org/10.1016/0168-583X(85)90311-8
State	Published - May 15 1985
Externally published	Yes

Funding

* Research sponsored by the Division of Materials Sciences, US Department of Energy under contract De-ACOS-84OR214tX) with Martin Marietta Energy Systems, Inc.

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10.1016/0168-583X(85)90311-8

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Sjoreen, T. P., Holland, O. W., Fathy, D., More, K., & Davis, R. F. (1985). Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of ¹⁶O. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 10-11(PART 1), 574-579. https://doi.org/10.1016/0168-583X(85)90311-8

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title = "Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of 16O",

abstract = "The dependence of near-surface crystallinity on substrate heating during high dose O+ implantation into Si and post-implantation annealing was studied. It is shown that the damage morphology in the crystalline region above the SiO2 layer is very sensitive to substrate temperature and that, under optimum implant conditions which minimize damage conditions in the near surface, annealing does not improve the near surface crystallinity. Rutherford backscattering/channeling spectroscopy and cross-sectional transmission electron microscopy were used to analyze the microstructure of the samples.",

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Sjoreen, TP, Holland, OW, Fathy, D, More, K & Davis, RF 1985, 'Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of ¹⁶O', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 10-11, no. PART 1, pp. 574-579. https://doi.org/10.1016/0168-583X(85)90311-8

Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of ¹⁶O. / Sjoreen, T. P.; Holland, O. W.; Fathy, D. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 10-11, No. PART 1, 15.05.1985, p. 574-579.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of 16O

AU - Sjoreen, T. P.

AU - Holland, O. W.

AU - Fathy, D.

AU - More, K.

AU - Davis, R. F.

PY - 1985/5/15

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N2 - The dependence of near-surface crystallinity on substrate heating during high dose O+ implantation into Si and post-implantation annealing was studied. It is shown that the damage morphology in the crystalline region above the SiO2 layer is very sensitive to substrate temperature and that, under optimum implant conditions which minimize damage conditions in the near surface, annealing does not improve the near surface crystallinity. Rutherford backscattering/channeling spectroscopy and cross-sectional transmission electron microscopy were used to analyze the microstructure of the samples.

AB - The dependence of near-surface crystallinity on substrate heating during high dose O+ implantation into Si and post-implantation annealing was studied. It is shown that the damage morphology in the crystalline region above the SiO2 layer is very sensitive to substrate temperature and that, under optimum implant conditions which minimize damage conditions in the near surface, annealing does not improve the near surface crystallinity. Rutherford backscattering/channeling spectroscopy and cross-sectional transmission electron microscopy were used to analyze the microstructure of the samples.

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - PART 1

ER -

Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of ¹⁶O

Abstract

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