Influence of strain on the dielectric behavior of (BaxSr1-x)Ti1+yO3+z thin films grown by LS-MOCVD on Pt/SiO2/Si

S. K. Streiffer; C. Basceri; C. B. Parker; S. E. Lash; J. Christman; H. Maiwa; Angus I. Kingon

Influence of strain on the dielectric behavior of (Ba_xSr_1-x)Ti_1+yO_3+z thin films grown by LS-MOCVD on Pt/SiO₂/Si

S. K. Streiffer
, C. Basceri
, C. B. Parker
, S. E. Lash
, J. Christman
, H. Maiwa
, Angus I. Kingon

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO₂/Si at 640 °C. It is estimated from x-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.

Original language	English
Pages	31-34
Number of pages	4
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: Aug 24 1998 → Aug 27 1998

Conference

Conference	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
City	Montreaux, Switz
Period	08/24/98 → 08/27/98

Cite this

@conference{17af7a7f495d4071863326fbe04e6708,

title = "Influence of strain on the dielectric behavior of (BaxSr1-x)Ti1+yO3+z thin films grown by LS-MOCVD on Pt/SiO2/Si",

abstract = "The strain state and its coupling to dielectric behavior have been investigated for \{100\} BST thin films deposited on Pt/SiO2/Si at 640 °C. It is estimated from x-ray diffraction that the in-plane biaxial strain is approximately 0.7\%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.",

author = "Streiffer, \{S. K.\} and C. Basceri and Parker, \{C. B.\} and Lash, \{S. E.\} and J. Christman and H. Maiwa and Kingon, \{Angus I.\}",

year = "1998",

language = "English",

pages = "31--34",

note = "Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) ; Conference date: 24-08-1998 Through 27-08-1998",

}

Streiffer, SK, Basceri, C, Parker, CB, Lash, SE, Christman, J, Maiwa, H & Kingon, AI 1998, 'Influence of strain on the dielectric behavior of (Ba_xSr_1-x)Ti_1+yO_3+z thin films grown by LS-MOCVD on Pt/SiO₂/Si', Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, 08/24/98 - 08/27/98 pp. 31-34.

Influence of strain on the dielectric behavior of (Ba_xSr_1-x)Ti_1+yO_3+z thin films grown by LS-MOCVD on Pt/SiO₂/Si. / Streiffer, S. K.; Basceri, C.; Parker, C. B. et al.
1998. 31-34 Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Influence of strain on the dielectric behavior of (BaxSr1-x)Ti1+yO3+z thin films grown by LS-MOCVD on Pt/SiO2/Si

AU - Streiffer, S. K.

AU - Basceri, C.

AU - Parker, C. B.

AU - Lash, S. E.

AU - Christman, J.

AU - Maiwa, H.

AU - Kingon, Angus I.

PY - 1998

Y1 - 1998

N2 - The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO2/Si at 640 °C. It is estimated from x-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.

AB - The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO2/Si at 640 °C. It is estimated from x-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.

UR - https://www.scopus.com/pages/publications/0032280995

M3 - Paper

AN - SCOPUS:0032280995

SP - 31

EP - 34

T2 - Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)

Y2 - 24 August 1998 through 27 August 1998

ER -

Influence of strain on the dielectric behavior of (Ba_xSr_1-x)Ti_1+yO_3+z thin films grown by LS-MOCVD on Pt/SiO₂/Si

Abstract

Conference

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