Abstract
The properties of SrBi2Ta2O9 (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibit high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films synthesized on Pt/Ti/SiO2/Si. It is shown that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SBT properties.
Original language | English |
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Pages (from-to) | 496-498 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 4 |
DOIs | |
State | Published - Jan 24 2000 |
Externally published | Yes |