Abstract
The effects of implanted oxygen on the damage accumulation in sapphire which was previously implanted with iron was studied for (0 0 0 1) sapphire. The energies were chosen to give similar projected ranges. One series was implanted with a 1:1 ratio (4×1016 ions/cm2 each) and another with a ratio of 2:3 (4×1016 Fe+/cm2; 6×1016 O+/cm2). Retained damage, ξ, in the Al-sublattice, was compared to that produced by implantation of iron alone. The observed disorder was less for the dual implantation suggesting that implantation of oxygen enhanced dynamic recovery during implantation. Samples were annealed for 1 hour at 800 °C and 1200 °C in an oxidizing and in a reducing atmosphere. No difference was found in the kinetics of recovery in the Al-sublattice between the two dual implant conditions. However, the rate of recovery was different for each from samples implanted with iron alone.
| Original language | English |
|---|---|
| Pages (from-to) | 188-192 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 166 |
| DOIs | |
| State | Published - May 2 2000 |
| Event | 10th International Conference on Radiation Effects in Insulators - Jena, Ger Duration: Jul 18 1999 → Jul 23 1999 |
Funding
This study was supported in part by the Division of Materials Sciences, US Department of Energy under contract DE-AC05-96OR22464 with Lockheed Martin Energy Research Corporation. A portion of the work was conducted in the Surface Modification and Characterisation Facility, Oak Ridge National Laboratory.