Influence of grating parameters on reflectivity of Si/SiO2 high contrast gratings

Xiu Shan Li; Yong Qiang Ning; Xing Zhang; Peng Jia; Yong Yi Chen; Li Qin; Yun Liu; Li Jun Wang

doi:10.3788/fgxb20153607.0806

Influence of grating parameters on reflectivity of Si/SiO₂ high contrast gratings

Xiu Shan Li, Yong Qiang Ning, Xing Zhang, Peng Jia, Yong Yi Chen, Li Qin, Yun Liu, Li Jun Wang

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In order to solve the problem of poor stability of high contrast gratings (HCGs) for 850 nm VCSEL, a new type of Si/SiO₂ HCGs was put forward. The influence of grating parameters on HCG reflectivity of 850 nm was studied. The influence of the grating parameters, such as height, fill factor, duty, etching depth, angle, on the reflectivity of Si/SiO₂ HCGs for 850 nm was simulated and analyzed by the finite element analysis software. For the 850 nm TE light incidence from SiO₂ to the rectangular HCGs, it is found that only when the angle of gating is greater than 88°, can the reflectivity of HCGs be greater than 0.995, and other parameters of HCGs have a larger tolerance.

Original language	English
Pages (from-to)	806-810
Number of pages	5
Journal	Faguang Xuebao/Chinese Journal of Luminescence
Volume	36
Issue number	7
DOIs	https://doi.org/10.3788/fgxb20153607.0806
State	Published - Jul 1 2015
Externally published	Yes

Keywords

Finite element analysis
Gratings
High contrast gratings
Highly reflectivity

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10.3788/fgxb20153607.0806

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@article{b7725c547a8a4abf85e93b68b9f91e97,

title = "Influence of grating parameters on reflectivity of Si/SiO2 high contrast gratings",

abstract = "In order to solve the problem of poor stability of high contrast gratings (HCGs) for 850 nm VCSEL, a new type of Si/SiO2 HCGs was put forward. The influence of grating parameters on HCG reflectivity of 850 nm was studied. The influence of the grating parameters, such as height, fill factor, duty, etching depth, angle, on the reflectivity of Si/SiO2 HCGs for 850 nm was simulated and analyzed by the finite element analysis software. For the 850 nm TE light incidence from SiO2 to the rectangular HCGs, it is found that only when the angle of gating is greater than 88°, can the reflectivity of HCGs be greater than 0.995, and other parameters of HCGs have a larger tolerance.",

keywords = "Finite element analysis, Gratings, High contrast gratings, Highly reflectivity",

author = "Li, {Xiu Shan} and Ning, {Yong Qiang} and Xing Zhang and Peng Jia and Chen, {Yong Yi} and Li Qin and Yun Liu and Wang, {Li Jun}",

year = "2015",

month = jul,

day = "1",

doi = "10.3788/fgxb20153607.0806",

language = "English",

volume = "36",

pages = "806--810",

journal = "Faguang Xuebao/Chinese Journal of Luminescence",

issn = "1000-7032",

number = "7",

}

TY - JOUR

T1 - Influence of grating parameters on reflectivity of Si/SiO2 high contrast gratings

AU - Li, Xiu Shan

AU - Ning, Yong Qiang

AU - Zhang, Xing

AU - Jia, Peng

AU - Chen, Yong Yi

AU - Qin, Li

AU - Liu, Yun

AU - Wang, Li Jun

PY - 2015/7/1

Y1 - 2015/7/1

N2 - In order to solve the problem of poor stability of high contrast gratings (HCGs) for 850 nm VCSEL, a new type of Si/SiO2 HCGs was put forward. The influence of grating parameters on HCG reflectivity of 850 nm was studied. The influence of the grating parameters, such as height, fill factor, duty, etching depth, angle, on the reflectivity of Si/SiO2 HCGs for 850 nm was simulated and analyzed by the finite element analysis software. For the 850 nm TE light incidence from SiO2 to the rectangular HCGs, it is found that only when the angle of gating is greater than 88°, can the reflectivity of HCGs be greater than 0.995, and other parameters of HCGs have a larger tolerance.

AB - In order to solve the problem of poor stability of high contrast gratings (HCGs) for 850 nm VCSEL, a new type of Si/SiO2 HCGs was put forward. The influence of grating parameters on HCG reflectivity of 850 nm was studied. The influence of the grating parameters, such as height, fill factor, duty, etching depth, angle, on the reflectivity of Si/SiO2 HCGs for 850 nm was simulated and analyzed by the finite element analysis software. For the 850 nm TE light incidence from SiO2 to the rectangular HCGs, it is found that only when the angle of gating is greater than 88°, can the reflectivity of HCGs be greater than 0.995, and other parameters of HCGs have a larger tolerance.

KW - Finite element analysis

KW - Gratings

KW - High contrast gratings

KW - Highly reflectivity

UR - http://www.scopus.com/inward/record.url?scp=84938566601&partnerID=8YFLogxK

U2 - 10.3788/fgxb20153607.0806

DO - 10.3788/fgxb20153607.0806

M3 - Article

AN - SCOPUS:84938566601

SN - 1000-7032

VL - 36

SP - 806

EP - 810

JO - Faguang Xuebao/Chinese Journal of Luminescence

JF - Faguang Xuebao/Chinese Journal of Luminescence

IS - 7

ER -

Influence of grating parameters on reflectivity of Si/SiO₂ high contrast gratings

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