Indium zinc oxide thin films deposited by sputtering at room temperature

Wantae Lim; Yu Lin Wang; F. Ren; D. P. Norton; I. I. Kravchenko; J. M. Zavada; S. J. Pearton

doi:10.1016/j.apsusc.2007.10.032

Indium zinc oxide thin films deposited by sputtering at room temperature

Wantae Lim
, Yu Lin Wang
, F. Ren
, D. P. Norton
, I. I. Kravchenko
, J. M. Zavada
, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10 ¹⁴ and 3 × 10 ²⁰ cm ^-3 by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10 ^-3 and 10 ⁴ Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm ² V ^-1 s ^-1 .The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.

Original language	English
Pages (from-to)	2878-2881
Number of pages	4
Journal	Applied Surface Science
Volume	254
Issue number	9
DOIs	https://doi.org/10.1016/j.apsusc.2007.10.032
State	Published - Feb 28 2008
Externally published	Yes

Funding

The work is partially supported by DOE under grant DE-FC26-04NT42271 (Ryan Egidi), Army Research Office under grant no. DAAD19-01-1-0603 and NSF (DMR 0400416, Dr. L. Hess). We thank MAIC staff for their help in the performance of this work.

Keywords

Indium zinc oxide
Sputtering
Thin film transistors

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10.1016/j.apsusc.2007.10.032

Cite this

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title = "Indium zinc oxide thin films deposited by sputtering at room temperature",

abstract = " The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10 14 and 3 × 10 20 cm -3 by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10 -3 and 10 4 Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm 2 V -1 s -1 .The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.",

keywords = "Indium zinc oxide, Sputtering, Thin film transistors",

author = "Wantae Lim and Wang, \{Yu Lin\} and F. Ren and Norton, \{D. P.\} and Kravchenko, \{I. I.\} and Zavada, \{J. M.\} and Pearton, \{S. J.\}",

year = "2008",

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day = "28",

doi = "10.1016/j.apsusc.2007.10.032",

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T1 - Indium zinc oxide thin films deposited by sputtering at room temperature

AU - Lim, Wantae

AU - Wang, Yu Lin

AU - Ren, F.

AU - Norton, D. P.

AU - Kravchenko, I. I.

AU - Zavada, J. M.

AU - Pearton, S. J.

PY - 2008/2/28

Y1 - 2008/2/28

N2 - The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10 14 and 3 × 10 20 cm -3 by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10 -3 and 10 4 Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm 2 V -1 s -1 .The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.

AB - The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10 14 and 3 × 10 20 cm -3 by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10 -3 and 10 4 Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm 2 V -1 s -1 .The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.

KW - Indium zinc oxide

KW - Sputtering

KW - Thin film transistors

UR - https://www.scopus.com/pages/publications/38949212691

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DO - 10.1016/j.apsusc.2007.10.032

M3 - Article

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SN - 0169-4332

VL - 254

SP - 2878

EP - 2881

JO - Applied Surface Science

JF - Applied Surface Science

IS - 9

ER -

Indium zinc oxide thin films deposited by sputtering at room temperature

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Keywords

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