Indium zinc oxide thin films deposited by sputtering at room temperature

Wantae Lim, Yu Lin Wang, F. Ren, D. P. Norton, I. I. Kravchenko, J. M. Zavada, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10 14 and 3 × 10 20 cm -3 by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10 -3 and 10 4 Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm 2 V -1 s -1 .The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.

Original languageEnglish
Pages (from-to)2878-2881
Number of pages4
JournalApplied Surface Science
Volume254
Issue number9
DOIs
StatePublished - Feb 28 2008
Externally publishedYes

Funding

The work is partially supported by DOE under grant DE-FC26-04NT42271 (Ryan Egidi), Army Research Office under grant no. DAAD19-01-1-0603 and NSF (DMR 0400416, Dr. L. Hess). We thank MAIC staff for their help in the performance of this work.

Keywords

  • Indium zinc oxide
  • Sputtering
  • Thin film transistors

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