Abstract
The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10 14 and 3 × 10 20 cm -3 by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10 -3 and 10 4 Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm 2 V -1 s -1 .The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.
Original language | English |
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Pages (from-to) | 2878-2881 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 254 |
Issue number | 9 |
DOIs | |
State | Published - Feb 28 2008 |
Externally published | Yes |
Funding
The work is partially supported by DOE under grant DE-FC26-04NT42271 (Ryan Egidi), Army Research Office under grant no. DAAD19-01-1-0603 and NSF (DMR 0400416, Dr. L. Hess). We thank MAIC staff for their help in the performance of this work.
Keywords
- Indium zinc oxide
- Sputtering
- Thin film transistors