Indium and bismuth interdiffusion and its influence on the mobility in In2Se3/Bi2Se3

Hang Dong Lee; Can Xu; Samir M. Shubeita; Matthew Brahlek; Nikesh Koirala; Seongshik Oh; Torgny Gustafsson

doi:10.1016/j.tsf.2014.01.082

Indium and bismuth interdiffusion and its influence on the mobility in In₂Se₃/Bi₂Se₃

Hang Dong Lee, Can Xu, Samir M. Shubeita, Matthew Brahlek, Nikesh Koirala, Seongshik Oh, Torgny Gustafsson

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In₂Se₃/Bi₂Se₃ is a promising topological insulator (TI) device structure. However, the (Bi _{1 - x}In_x)₂Se₃ thin film system undergoes a transition from TI to band insulator as a function of In concentration, so an investigation of interdiffusion and its influence on transport properties of this system is important. We have grown Bi ₂Se₃ thin films on sapphire (Al₂O₃) using molecular beam epitaxy followed by In₂Se₃ thin film growth at three different temperatures. Medium energy ion scattering measurements of those films showed that the 50 C growth temperature resulted in less In diffusion and an amorphous In₂Se₃ structure. At higher growth temperatures In diffusion was more significant and better In ₂Se₃ crystallinity was observed. Our transport measurements showed that the mobility decreases with increasing In diffusion into Bi₂Se₃.

Original language	English
Pages (from-to)	322-324
Number of pages	3
Journal	Thin Solid Films
Volume	556
DOIs	https://doi.org/10.1016/j.tsf.2014.01.082
State	Published - Apr 1 2014
Externally published	Yes

Funding

This work was supported by the National Science Foundation grants DMR-1126468 and DMR-0845464 and Office of Naval Research N000140910749 .

Funders	Funder number
National Science Foundation	DMR-1126468, DMR-0845464
Office of Naval Research	N000140910749

Keywords

Diffusion
Medium energy ion scattering
Mobility
Topological insulators
Tunnel junctions

Access to Document

10.1016/j.tsf.2014.01.082

Cite this

@article{3991acd6e7da4912a515d4ad8d07e3bc,

title = "Indium and bismuth interdiffusion and its influence on the mobility in In2Se3/Bi2Se3",

abstract = "In2Se3/Bi2Se3 is a promising topological insulator (TI) device structure. However, the (Bi 1 - xInx)2Se3 thin film system undergoes a transition from TI to band insulator as a function of In concentration, so an investigation of interdiffusion and its influence on transport properties of this system is important. We have grown Bi 2Se3 thin films on sapphire (Al2O3) using molecular beam epitaxy followed by In2Se3 thin film growth at three different temperatures. Medium energy ion scattering measurements of those films showed that the 50 C growth temperature resulted in less In diffusion and an amorphous In2Se3 structure. At higher growth temperatures In diffusion was more significant and better In 2Se3 crystallinity was observed. Our transport measurements showed that the mobility decreases with increasing In diffusion into Bi2Se3.",

keywords = "Diffusion, Medium energy ion scattering, Mobility, Topological insulators, Tunnel junctions",

author = "Lee, {Hang Dong} and Can Xu and Shubeita, {Samir M.} and Matthew Brahlek and Nikesh Koirala and Seongshik Oh and Torgny Gustafsson",

year = "2014",

month = apr,

day = "1",

doi = "10.1016/j.tsf.2014.01.082",

language = "English",

volume = "556",

pages = "322--324",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Indium and bismuth interdiffusion and its influence on the mobility in In2Se3/Bi2Se3

AU - Lee, Hang Dong

AU - Xu, Can

AU - Shubeita, Samir M.

AU - Brahlek, Matthew

AU - Koirala, Nikesh

AU - Oh, Seongshik

AU - Gustafsson, Torgny

PY - 2014/4/1

Y1 - 2014/4/1

N2 - In2Se3/Bi2Se3 is a promising topological insulator (TI) device structure. However, the (Bi 1 - xInx)2Se3 thin film system undergoes a transition from TI to band insulator as a function of In concentration, so an investigation of interdiffusion and its influence on transport properties of this system is important. We have grown Bi 2Se3 thin films on sapphire (Al2O3) using molecular beam epitaxy followed by In2Se3 thin film growth at three different temperatures. Medium energy ion scattering measurements of those films showed that the 50 C growth temperature resulted in less In diffusion and an amorphous In2Se3 structure. At higher growth temperatures In diffusion was more significant and better In 2Se3 crystallinity was observed. Our transport measurements showed that the mobility decreases with increasing In diffusion into Bi2Se3.

AB - In2Se3/Bi2Se3 is a promising topological insulator (TI) device structure. However, the (Bi 1 - xInx)2Se3 thin film system undergoes a transition from TI to band insulator as a function of In concentration, so an investigation of interdiffusion and its influence on transport properties of this system is important. We have grown Bi 2Se3 thin films on sapphire (Al2O3) using molecular beam epitaxy followed by In2Se3 thin film growth at three different temperatures. Medium energy ion scattering measurements of those films showed that the 50 C growth temperature resulted in less In diffusion and an amorphous In2Se3 structure. At higher growth temperatures In diffusion was more significant and better In 2Se3 crystallinity was observed. Our transport measurements showed that the mobility decreases with increasing In diffusion into Bi2Se3.

KW - Diffusion

KW - Medium energy ion scattering

KW - Mobility

KW - Topological insulators

KW - Tunnel junctions

UR - http://www.scopus.com/inward/record.url?scp=84896405258&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.01.082

DO - 10.1016/j.tsf.2014.01.082

M3 - Article

AN - SCOPUS:84896405258

SN - 0040-6090

VL - 556

SP - 322

EP - 324

JO - Thin Solid Films

JF - Thin Solid Films

ER -