Indium adsorption on GaN under metal-organic chemical vapor deposition conditions

F. Jiang; R. V. Wang; A. Munkholm; S. K. Streiffer; G. B. Stephenson; P. H. Fuoss; K. Latifi; Carol Thompson

doi:10.1063/1.2364060

Indium adsorption on GaN under metal-organic chemical vapor deposition conditions

F. Jiang, R. V. Wang, A. Munkholm, S. K. Streiffer, G. B. Stephenson, P. H. Fuoss, K. Latifi, Carol Thompson

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27 Scopus citations

Abstract

Real-time synchrotron grazing-incidence x-ray fluorescence is employed to study indium adsorption on the GaN (0001) surface under typical process conditions for InGaN metal-organic chemical vapor deposition. An indium condensation boundary is mapped as a function of trimethylindium pressure, substrate temperature, and carrier gas composition. Below the condensation boundary, indium surface coverage reaches a maximum of ∼14 ML. The addition of 8% H2 to the carrier gas is found to have a significant effect on both condensation and adsorption of indium.

Original language	English
Article number	161915
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2364060
State	Published - 2006
Externally published	Yes

Funding

The work at Argonne National Laboratory was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. W-31-109-ENG-38.

Funders	Funder number
U.S. Department of Energy
Office of Science
Basic Energy Sciences	W-31-109-ENG-38
Argonne National Laboratory

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10.1063/1.2364060

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@article{c6f1f4e3b49b41d9a1a9d3c4d98b4d34,

title = "Indium adsorption on GaN under metal-organic chemical vapor deposition conditions",

abstract = "Real-time synchrotron grazing-incidence x-ray fluorescence is employed to study indium adsorption on the GaN (0001) surface under typical process conditions for InGaN metal-organic chemical vapor deposition. An indium condensation boundary is mapped as a function of trimethylindium pressure, substrate temperature, and carrier gas composition. Below the condensation boundary, indium surface coverage reaches a maximum of ∼14 ML. The addition of 8% H2 to the carrier gas is found to have a significant effect on both condensation and adsorption of indium.",

author = "F. Jiang and Wang, {R. V.} and A. Munkholm and Streiffer, {S. K.} and Stephenson, {G. B.} and Fuoss, {P. H.} and K. Latifi and Carol Thompson",

year = "2006",

doi = "10.1063/1.2364060",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Indium adsorption on GaN under metal-organic chemical vapor deposition conditions

AU - Jiang, F.

AU - Wang, R. V.

AU - Munkholm, A.

AU - Streiffer, S. K.

AU - Stephenson, G. B.

AU - Fuoss, P. H.

AU - Latifi, K.

AU - Thompson, Carol

PY - 2006

Y1 - 2006

N2 - Real-time synchrotron grazing-incidence x-ray fluorescence is employed to study indium adsorption on the GaN (0001) surface under typical process conditions for InGaN metal-organic chemical vapor deposition. An indium condensation boundary is mapped as a function of trimethylindium pressure, substrate temperature, and carrier gas composition. Below the condensation boundary, indium surface coverage reaches a maximum of ∼14 ML. The addition of 8% H2 to the carrier gas is found to have a significant effect on both condensation and adsorption of indium.

AB - Real-time synchrotron grazing-incidence x-ray fluorescence is employed to study indium adsorption on the GaN (0001) surface under typical process conditions for InGaN metal-organic chemical vapor deposition. An indium condensation boundary is mapped as a function of trimethylindium pressure, substrate temperature, and carrier gas composition. Below the condensation boundary, indium surface coverage reaches a maximum of ∼14 ML. The addition of 8% H2 to the carrier gas is found to have a significant effect on both condensation and adsorption of indium.

UR - http://www.scopus.com/inward/record.url?scp=33750193982&partnerID=8YFLogxK

U2 - 10.1063/1.2364060

DO - 10.1063/1.2364060

M3 - Article

AN - SCOPUS:33750193982

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161915

ER -

Indium adsorption on GaN under metal-organic chemical vapor deposition conditions

Abstract

Funding

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