Indentation-induced phase transformations in silicon: Influences of load, rate and indenter angle on the transformation behavior

Jae Il Jang; M. J. Lance; Songqing Wen; Ting Y. Tsui; G. M. Pharr

doi:10.1016/j.actamat.2004.12.025

Indentation-induced phase transformations in silicon: Influences of load, rate and indenter angle on the transformation behavior

Jae Il Jang, M. J. Lance, Songqing Wen, Ting Y. Tsui, G. M. Pharr

Applied Microanalysis and Thermophysics

Research output: Contribution to journal › Article › peer-review

312 Scopus citations

Abstract

Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3°to 85.0°. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon.

Original language	English
Pages (from-to)	1759-1770
Number of pages	12
Journal	Acta Materialia
Volume	53
Issue number	6
DOIs	https://doi.org/10.1016/j.actamat.2004.12.025
State	Published - Apr 2005

Funding

This research was sponsored by the National Science Foundation under Grant No. DMR-0203552, and by the Division of Materials Sciences and Engineering (SHaRE User Center), U.S. Department of Energy, under Contract DE-AC05-00OR22725 with UT-Battelle, LLC.

Keywords

Nanoindentation
Phase transformations
Raman spectroscopy
Silicon

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10.1016/j.actamat.2004.12.025

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title = "Indentation-induced phase transformations in silicon: Influences of load, rate and indenter angle on the transformation behavior",

abstract = "Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3°to 85.0°. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon.",

keywords = "Nanoindentation, Phase transformations, Raman spectroscopy, Silicon",

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T1 - Indentation-induced phase transformations in silicon

T2 - Influences of load, rate and indenter angle on the transformation behavior

AU - Jang, Jae Il

AU - Lance, M. J.

AU - Wen, Songqing

AU - Tsui, Ting Y.

AU - Pharr, G. M.

PY - 2005/4

Y1 - 2005/4

N2 - Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3°to 85.0°. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon.

AB - Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3°to 85.0°. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon.

KW - Nanoindentation

KW - Phase transformations

KW - Raman spectroscopy

KW - Silicon

UR - https://www.scopus.com/pages/publications/13844280308

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SN - 1359-6454

VL - 53

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JO - Acta Materialia

JF - Acta Materialia

IS - 6

ER -

Indentation-induced phase transformations in silicon: Influences of load, rate and indenter angle on the transformation behavior

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